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| IRFB13N50APBF Datasheet, PDF (2/8 Pages) International Rectifier – SMPS MOSFET | |||
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IRFB13N50APbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
500 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.55 âââ V/°C Reference to 25°C, ID = 1mA
âââ âââ 0.450 ⦠VGS = 10V, ID = 8.4A Â
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
âââ âââ 25
âââ âââ 250
µA VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
8.1 âââ âââ S VDS = 50V, ID = 8.4A
Qg
Qgs
Qgd
td(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
âââ âââ 81
ID = 14A
âââ âââ 20 nC VDS = 400V
âââ âââ 36
VGS = 10V, See Fig. 6 and 13 Â
âââ 15 âââ
VDD = 250V
tr
td(off)
tf
Ciss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
âââ 39 âââ ns ID = 14A
âââ 39 âââ
RG = 7.5â¦
âââ 31 âââ
VGS = 10V,See Fig. 10 Â
âââ 1910 âââ
VGS = 0V
Coss
Crss
Coss
Coss
Coss eff.
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 290 âââ
âââ 11 âââ
âââ 2730 âââ
âââ 82 âââ
âââ 160 âââ
VDS = 25V
pF Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
iRRM
Reverse RecoveryCurrent
ton
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
 Starting TJ = 25°C, L = 5.7mH, RG = 25â¦,
IAS = 14A, dv/dt = 7.6V/ns. (See Figure 12a)
 ISD ⤠14A, di/dt ⤠250A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C.
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 14
A showing the
integral reverse
G
âââ âââ 56
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 14A, VGS = 0V Â
âââ 370 550 ns TJ = 125°C, IF = 14A
âââ 4.4 6.5 µC di/dt = 100A/µs Â
âââ 21 31 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
2
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