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IRFAF50_15 Datasheet, PDF (2/7 Pages) International Rectifier – Simple Drive Requirements | |||
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IRFAF50
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
900
âBVDSS/âTJ Temperature Coefficient of Breakdown â
Voltage
RDS(on)
Static Drain-to-Source On-State
â
Resistance
â
VGS(th)
Gate Threshold Voltage
2.0
gfs
IDSS
Forward Transconductance
4.9
Zero Gate Voltage Drain Current
â
â
IGSS
Gate-to-Source Leakage Forward
â
IGSS
Gate-to-Source Leakage Reverse
â
Total Gate Charge
80
Qgs
Gate-to-Source Charge
7.5
Qgd
Gate-to-Drain (âMillerâ) Charge
48
td(on)
Turn-On Delay Time
â
tr
Rise Time
â
td(off)
Turn-Off Delay Time
â
tf
Fall Time
â
LS + LD
Total Inductance
â
ââ V
VGS = 0V, ID = 1.0mA
1.2 â V/°C Reference to 25°C, ID = 1.0mA
â 1.6
â 1.85 â¦
â 4.0 V
â â S( )
â 25
â 250 µA
â 100 nA
â -100
â 180
â 17 nC
â 110
â 33
â 66
â 200
â 57
6.1 â
VGS = 10V, ID =4.0A â
VGS = 10V, ID =6.2A â
VDS = VGS, ID =250µA
VDS > 15V, IDS =4.0A â
VDS=720V, VGS=0V
VDS =720V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V, ID = 6.2A
VDS = 450V
VDD = 400V*, ID =6.2A,
RG =2.35â¦
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
*Equipment Limitation
â 2700
â 500 â pF
â 200 â
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) â
â â 6.2 A
â â 25
VGS = 0V, VDS = 25V
f = 1.0MHz
Test Conditions
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
â â 1.8 V
â â 1500 nS
â â 1 1 µC
Tj = 25°C, IS =6.2A, VGS = 0V â
Tj = 25°C, IF =6.2A, di/dt ⤠100A/µs
VDD ⤠50V â
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction to Case
Junction to Ambient
For footnotes refer to the last page
2
Min Typ Max Units
â â 0.83
°C/W
â â 30
Test Conditions
Typical socket mount
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