IRFAF50 Datasheet, PDF (2/7 Pages) International Rectifier – REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

IRFAF50
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
900
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
—
VGS(th)
Gate Threshold Voltage
2.0
gfs
IDSS
Forward Transconductance
4.9
Zero Gate Voltage Drain Current
—
—
IGSS
Gate-to-Source Leakage Forward
—
IGSS
Gate-to-Source Leakage Reverse
—
Total Gate Charge
80
Qgs
Gate-to-Source Charge
7.5
Qgd
Gate-to-Drain (‘Miller’) Charge
48
td_(on)
Turn-On Delay Time
—
tr
Rise Time
—
td_(off)
Turn-Off Delay Time
—
tf
Fall Time
—
LS ₊ LD
Total Inductance
—
—— V
VGS = 0V, ID = 1.0mA
1.2 — V/°C Reference to 25°C, ID = 1.0mA
— 1.6
— 1.85 ^Ω
— 4.0 V
— — S( )
— 25
— 250 ^µA
— 100 _nA
— -100
— 180
— 17 nC
— 110
— 33
— 66
— 200
— 57
6.1 —
VGS = 10V, ID =4.0A ➃
VGS = 10V, ID =6.2A ➃
VDS = VGS, ID =250µA
VDS > 15V, IDS =4.0A ➃
VDS=720V, VGS=0V
VDS =720V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V, ID = 6.2A
VDS = 450V
VDD = 400V*, ID =6.2A,
RG =2.35Ω
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
*Equipment Limitation
— 2700
— 500 — pF
— 200 —
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) ➀
— — 6.2 _A
— — 25
VGS = 0V, VDS = 25V
f = 1.0MHz
Test Conditions
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
— — 1.8 V
— — 1500 nS
— — 1 1 µC
Tj = 25°C, IS =6.2A, VGS = 0V ➃
Tj = 25°C, IF =6.2A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction to Case
Junction to Ambient
For footnotes refer to the last page
2
Min Typ Max Units
— — 0.83
°C/W
— — 30
Test Conditions
Typical socket mount
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