IRFAF40 Datasheet, PDF (2/7 Pages) International Rectifier – HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 900V, N-CHANNEL

IRFAF40
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
900
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
—
VGS(th)
Gate Threshold Voltage
2.0
gfs
IDSS
Forward Transconductance
3.6
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td_(on)
tr
td_(off)
tf
LS ₊ LD
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Total Gate Charge
53
Gate-to-Source Charge
4.8
Gate-to-Drain (‘Miller’) Charge
30
Turn-On Delay Time
—
Rise Time
—
Turn-Off Delay Time
—
Fall Time
—
Total Inductance
—
—— V
VGS = 0V, ID = 1.0mA
1.2 — V/°C Reference to 25°C, ID = 1.0mA
— 2.5
— 2.9
— 4.0
——
— 25
— 250
Ω
V
S()
µA
— 100 _nA
— -100
— 120
— 11 nC
— 68
— 24
— 39
ns
— 170
— 44
6.1 — nH
VGS = 10V, ID =2.7A➃
VGS = 10V, ID =4.3A ➃
VDS = VGS, ID =250µA
VDS > 15V, IDS =2.7A ➃
VDS=720V, VGS=0V
VDS = 720V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS ₌ 10V, ID = 4.3A
VDS = 450V
VDD =400V*, ID = 4.3A,
RG =9.1Ω
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
* Equipment Limitation
— 1500
— 190 — pF
— 72 —
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) ➀
— — 4.3 _A
— — 17
Test Conditions
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward
— — 1.8 V
— — 1100 nS
— — 6.7 µC
Tj = 25°C, IS =4.3A, VGS = 0V ➃
Tj = 25°C, IF =4.3A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Thermal Resistance
Parameter
RthJC
RthJA
Junction to Case
Junction to Ambient
For footnotes refer to the last page
2
Min Typ Max Units
— — 1.0
°C/W
— — 30
Test Conditions
Typical socket mount
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