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IRFAF30 Datasheet, PDF (2/7 Pages) International Rectifier – HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
IRFAF30
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
900
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
—
VGS(th)
Gate Threshold Voltage
2.0
gfs
Forward Transconductance
2.3
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Total Gate Charge
29
Gate-to-Source Charge
3.2
Gate-to-Drain (‘Miller’) Charge
16
Turn-On Delay Time
—
Rise Time
—
Turn-Off Delay Time
—
Fall Time
—
Total Inductance
—
—— V
VGS = 0V, ID = 1.0mA
1.2 — V/°C Reference to 25°C, ID = 1.0mA
— 4.0
— 4.6
Ω
VGS = 10V, ID =1.7A➃
VGS = 10V, ID =2.0A ➃
— 4.0 V
— — S( )
— 25
— 250 µA
— 100
— -100 nA
— 66
— 7.2 nC
VDS = VGS, ID =250µA
VDS > 15V, IDS =1.7A ➃
VDS=720V ,VGS=0V
VDS =720V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS= 10V, ID = 2.0A
VDS = 450V
— 37
— 21
— 30
— 140 n s
VDD =400V*, ID =2.0A,
RG =7.5Ω
— 47
6.1
—
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
— 1000
— 200 — pF
— 98 —
VGS = 0V, VDS = 25V
f = 1.0MHz
* Equipment Limitation
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) ➀
— — 2.8 A
— — 8.0
Test Conditions
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
— — 1.8 V
— — 730 nS
— — 3.0 µC
Tj = 25°C, IS =2.0A, VGS = 0V ➃
Tj = 25°C, IF =2.0A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction to Case
Junction to Ambient
For footnotes refer to the last page
2
Min Typ Max Units
— — 1.67
°C/W
— — 30
Test Conditions
Typical socket mount
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