IRF9Z34S Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

IRF9Z34S/L
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
g_fs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Qgd
td(on)
tr
t_d(off)
t_f
L_S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Coss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-60 ––– ––– V V_GS = 0V, I_D = -250µA
––– -0.06 ––– V/°C Reference to 25°C, ID =-1mA…
––– ––– 0.14 Ω VGS =-10V, ID = -11A „
-2.0 ––– -4.0 V VDS = VGS, ID = -250µA
5.9 ––– ––– S V_DS = -25V, I_D = -11A…
––– ––– -100 _µA V_DS = -60V, V_GS = 0V
––– ––– -500
VDS = -48V, VGS = 0V, TJ = 150°C
––– ––– -100 _nA VGS = -20V
––– ––– 100
VGS = 20V
––– ––– 34
I_D = -18A
––– ––– 9.9 nC V_DS = -48V
––– ––– 16
VGS = -10V, See Fig. 6 and 13 „…
––– 18 –––
VDD = -30V
––– 120 –––
––– 20 –––
ns
ID = -18A
R_G = 12Ω
––– 58 –––
R_D = 1.5Ω, See Fig. 10 „
–––
7.5 ^{–––}
nH
Between lead,
and center of die contact
––– 1100 –––
VGS = 0V
––– 620 ––– pF VDS = -25V
––– 100 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– -18
A ^{showing the}
integral reverse
G
––– ––– _-72
p-n junction diode.
S
––– ––– -6.3 V T_J = 25°C, I_S = -18A, V_GS = 0V „
––– 100 200 ns TJ = 25°C, IF = -18A
––– 280 520 nC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ V_DD = -25V, starting T_J = 25°C, L = 1.3mH
R_G = 25Ω, I_AS = -18A. (See Figure 12)
ƒ I_SD ≤ -18A, di/dt ≤ 170A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRF9Z34 data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.