IRF9Z34NSTRRPBF Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Process Technology

IRF9Z34NS/L
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Qg
Q_gs
Q_gd
td(on)
tr
td(off)
t_f
L_S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-55 ––– ––– V V_GS = 0V, I_D = -250µA
––– -0.05 ––– V/°C Reference to 25°C, I_D = -1mA…
––– ––– 0.10 Ω VGS = -10V, ID = -10A „
-2.0 ––– -4.0 V VDS = VGS, ID = -250µA
4.2 ––– ––– S VDS = -25V, ID = -10A…
––– ––– -25 _µA V_DS = -55V, V_GS = 0V
––– ––– -250
V_DS = -44V, V_GS = 0V, T_J = 150°C
––– ––– 100 _nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 35
ID = -10A
––– ––– 7.9
––– ––– 16
nC V_DS = -44V
V_GS = -10V, See Fig. 6 and 13 „…
––– 13 –––
VDD = -28V
––– 55 ––– _ns ID = -10A
––– 30 –––
RG = 13Ω
––– 41 –––
R_D = 2.6Ω, See Fig. 10 „
Between lead,
––– 7.5 ––– nH _{and center of die contact}
––– 620 –––
VGS = 0V
––– 280 ––– pF VDS = -25V
––– 140 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V _SD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– -19
A ^{showing the}
integral reverse
G
––– ––– -68
p-n junction diode.
S
––– ––– -1.6 V T_J = 25°C, I_S = -10A, V_GS = 0V „
––– 54 82 ns TJ = 25°C, IF = -10A
––– 110 160 nC di/dt = -100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ Starting T_J = 25°C, L = 3.6mH
R_G = 25Ω, I_AS = -10A. (See Figure 12)
… Uses IRF9Z34N data and test conditions
ƒ I_SD ≤ -10A, di/dt ≤ -290A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.