IRF9956 Datasheet, PDF (2/7 Pages) International Rectifier – Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

IRF9956
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, ID = 1mA
R_DS(on)
Static Drain-to-Source On-Resistance
––– 0.06 0.10
––– 0.09 0.20
Ω
VGS = 10V, ID = 2.2A „
VGS = 4.5V, ID = 1.0A „
VGS(th)
Gate Threshold Voltage
1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
––– 12 ––– S VDS = 15V, ID = 3.5A
I_DSS
Drain-to-Source Leakage Current
––– ––– 2.0
––– ––– 25
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 _nA VGS = 24V
––– ––– -100
VGS = -24V
Qg
Total Gate Charge
––– 6.9 14
ID = 1.8A
Qgs
Gate-to-Source Charge
––– 1.0 2.0 nC VDS = 10V
Qgd
Gate-to-Drain ("Miller") Charge
––– 1.8 3.5
VGS = 10V, See Fig. 10 „
td(on)
Turn-On Delay Time
––– 6.2 12
VDD = 10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 8.8 18
––– 13 26
ns ^{ID = 1.0A}
RG = 6.0Ω
tf
Fall Time
––– 3.0 6.0
RD = 10Ω „
Ciss
Input Capacitance
––– 190 –––
VGS = 0V
Coss
Output Capacitance
––– 120 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 61 –––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
trr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.82
27
28
Max.
1.7
16
1.2
53
57
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
T_J = 25°C, I_S = 1.25A, V_GS = 0V ƒ
TJ = 25°C, IF = 1.25A
di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 22mH
R_G = 25Ω, I_AS = 2.0A.
ƒ I_SD ≤ 2.0A, di/dt ≤ 100A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Surface mounted on FR-4 board, t ≤ 10sec.