|
IRF9953PBF_15 Datasheet, PDF (2/7 Pages) International Rectifier – ULTRA LOW ON RESISTANCE | |||
|
◁ |
IRF9953PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-30   V VGS = 0V, ID = -250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient  0.015  V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
ÂÂÂ 0.165 0.250
ÂÂÂ 0.290 0.400
â¦
VGS = 10V, ID = -1.0A Â
VGS = 4.5V, ID = -0.50A Â
VGS(th)
Gate Threshold Voltage
-1.0   V VDS = VGS, ID = -250µA
gfs
Forward Transconductance
ÂÂÂ -2.4 ÂÂÂ S VDS = -15V, ID = -2.3A
IDSS
Drain-to-Source Leakage Current
ÂÂÂ ÂÂÂ -2.0
ÂÂÂ ÂÂÂ -25
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
ÂÂÂ ÂÂÂ 100 nA VGS = -20V
ÂÂÂ ÂÂÂ -100
VGS = 20V
Qg
Total Gate Charge
ÂÂÂ 6.1 12
ID = -2.3A
Qgs
Gate-to-Source Charge
ÂÂÂ 1.7 3.4 nC VDS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
ÂÂÂ 1.1 2.2
VGS = -10V, See Fig. 10 Â
td(on)
Turn-On Delay Time
ÂÂÂ 9.7 19
VDD = -10V
tr
td(off)
Rise Time
Turn-Off Delay Time
ÂÂÂ 14 28
ÂÂÂ 20 40
ns ID = -1.0A
RG = 6.0â¦
tf
Fall Time
ÂÂÂ 6.9 14
RD = 10⦠Â
Ciss
Input Capacitance
ÂÂÂ 190 ÂÂÂ
VGS = 0V
Coss
Output Capacitance
ÂÂÂ 120 ÂÂÂ pF VDS = -15V
Crss
Reverse Transfer Capacitance
ÂÂÂ 61 ÂÂÂ
 = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
Typ.
ÂÂÂ
ÂÂÂ
0.82
27
31
Max.
1.3
16
1.2
54
62
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.25A, VGS = 0V Â
TJ = 25°C, IF = -1.25A
di/dt = -100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Starting TJ = 25°C, L = 67mH
RG = 25â¦, IAS = -1.3A.
Â
Surface mounted on FR-4 board, t ⤠10sec.
 ISD ⤠-1.3A, di/dt ⤠-92A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
|
▷ |