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IRF9952PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF9952PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
N-Ch 30 Â Â
P-Ch -30 Â Â
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
N-Ch
P-Ch
 0.015 Â
 0.015 Â
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
N-Ch
P-Ch
Â
Â
Â
Â
0.08 0.10
0.12 0.15
0.165 0.250
0.290 0.400
â¦
VGS = 10V, ID = 2.2A Â
VGS = 4.5V, ID = 1.0A Â
VGS = -10V, ID = -1.0A Â
VGS = -4.5V, ID = -0.50A Â
N-Ch 1.0 Â Â
P-Ch -1.0 Â Â
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
N-Ch  12 Â
P-Ch  2.4 Â
S
VDS = 15V, ID = 3.5A Â
VDS = -15V, ID = -2.3A
Â
N-Ch   2.0
VDS = 24V, VGS = 0V
P-Ch Â
N-Ch Â
Â
Â
-2.0
25
µA
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
P-Ch   -25
VDS = -24V, VGS = 0V, TJ = 125°C
N-P   ±100 nA VGS = ±20V
N-Ch Â
P-Ch Â
N-Ch Â
P-Ch Â
N-Ch Â
P-Ch Â
6.9 14
6.1 12
1.0 2.0
1.7 3.4
1.8 3.5
1.1 2.2
nC
N-Channel
ID = 1.8A, VDS = 10V, VGS = 10V
Â
P-Channel
ID = -2.3A, VDS = -10V, VGS = -10V
N-Ch  6.2 12
P-Ch Â
N-Ch Â
P-Ch Â
N-Ch Â
P-Ch Â
N-Ch Â
P-Ch Â
9.7 19
8.8 18
14 28
13 26
20 40
3.0 6.0
6.9 14
ns
N-Channel
VDD = 10V, ID = 1.0A, RG = 6.0â¦,
RD = 10â¦
Â
P-Channel
VDD = -10V, ID = -1.0A, RG = 6.0â¦,
RD = 10â¦
N-Ch  190 Â
N-Channel
P-Ch  190 Â
VGS = 0V, VDS = 15V, Â = 1.0MHz
N-Ch  120  pF
P-Ch  110 Â
P-Channel
N-Ch  61 Â
VGS = 0V, VDS = -15V, Â = 1.0MHz
P-Ch  54 Â
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch   1.7
IS
Continuous Source Current (Body Diode)
P-Ch   -1.3 A
N-Ch   16
ISM
Pulsed Source Current (Body Diode) Â
P-Ch   16
VSD
Diode Forward Voltage
N-Ch  0.82 1.2
P-Ch  -0.82 -1.2
V
TJ = 25°C, IS = 1.25A, VGS = 0V Â
TJ = 25°C, IS = -1.25A, VGS = 0V Â
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch Â
P-Ch Â
27
27
53
54
ns
N-Channel
TJ = 25°C, IF =1.25A, di/dt = 100A/µs
N-Ch Â
P-Ch Â
28
31
57
62
nC
P-Channel
Â
TJ = 25°C, IF = -1.25A, di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
 Pulse width ⤠300µs; duty cycle ⤠2%.
 N-Channel ISD ⤠2.0A, di/dt ⤠100A/µs, VDD ⤠V(BR)DSS, TJ ⤠150°C Â
Surface mounted on FR-4 board, t ⤠10sec.
P-Channel ISD ⤠-1.3A, di/dt ⤠84A/µs, VDD ⤠V(BR)DSS, TJ ⤠150°C
 N-Channel Starting TJ = 25°C, L = 22mH RG = 25â¦, IAS = 2.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 67mH RG = 25â¦, IAS = -1.3A.
2
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