IRF9540NSPBF_15 Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Process Technology

IRF9540NS/LPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
gfs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_D
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
-100
–––
–––
-2.0
5.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-0.11
–––
–––
–––
–––
–––
–––
–––
73
13
38
13
64
40
45
4.5
–––
–––
117
-4.0
–––
-50
-250
100
-100
110
20
57
–––
–––
–––
–––
–––
V V_GS = 0V, I_D = -250µA
f ^{V/°C Reference to 25°C, ID = -1mA}
mΩ V_GS = -10V, I_D = -14A
V V_DS = V_GS, I_D = -250µA
S V_DS = -50V, I_D = -14A
µA V_DS = -100V, V_GS = 0V
V_DS = -80V, V_GS = 0V, T_J = 125°C
nA V_GS = -20V
V_GS = 20V
nC I_D = -14A
f ^{VDS = -80V}
V_GS = -10V
ns V_DD = -50V
I_D = -14A
f ^{RG = 5.1Ω}
V_GS = -10V
nH Between lead,
6mm (0.25in.)
L_S
Internal Source Inductance
––– 7.5 –––
from package
and center of die contact
C_iss
Input Capacitance
––– 1450 ––– pF V_GS = 0V
C_oss
Output Capacitance
––– 430 –––
V_DS = -25V
C_rss
Reverse Transfer Capacitance
––– 230 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– -23
MOSFET symbol
(Body Diode)
A showing the
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
––– ––– -92
integral reverse
––– ––– -1.6
f ^{p-n junction diode.}
V ^TJ ^{= 25°C, I}S ^{= -14A, V}GS ^{= 0V}
–––
–––
140 210
890 1340
f ^{ns TJ = 25°C, IF = -14A, VDD = -25V}
nC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
‚ Starting T_J = 25°C, L = 0.88mH
R_G = 25Ω, I_AS = -14A. (See Figure 12)
ƒ I_SD ≤ -14A, di/dt ≤ -620A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C.
2
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… When mounted on 1" square PCB (FR-4or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
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