IRF9520N Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

IRF9520N
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V(BR)DSS/∆TJ
R_DS(on)
V_GS(th)
g_fs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min. Typ. Max.
-100 ––– –––
––– -0.10 –––
––– ––– 0.48
-2.0 ––– -4.0
1.4 ––– –––
––– ––– -25
––– ––– -250
––– ––– 100
––– ––– -100
––– ––– 27
––– ––– 5.0
––– ––– 15
––– 14 –––
––– 47 –––
––– 28 –––
––– 31 –––
––– 4.5 –––
––– 7.5 –––
––– 350 –––
––– 110 –––
––– 70 –––
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
pF
Conditions
V_GS = 0V, I_D = -250µA
Reference to 25°C, I_D = -1mA
V_GS = -10V, I_D = -4.0A „
V_DS = V_GS, I_D = -250µA
V_DS = -50V, I_D = -4.0A
V_DS = -100V, V_GS = 0V
V_DS = -80V, V_GS = 0V, T_J = 150°C
V_GS = 20V
V_GS = -20V
I_D = -4.0A
V_DS = -80V
V_GS = -10V, See Fig. 6 and 13 „
V_DD = -50V
I_D = -4.0A
R_G = 22Ω
R_D = 12Ω, See Fig. 10 „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
V_GS = 0V
V_DS = -25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– -6.8 _{A showing the}
integral reverse
G
––– ––– -27
p-n junction diode.
S
––– ––– -1.6 V T_J = 25°C, I_S = -4.0A, V_GS = 0V „
––– 100 150 ns T_J = 25°C, I_F = -4.0A
––– 420 630 nC di/dt = -100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 18 mH
R_G = 25Ω, I_AS = -4.0A. (See Figure 12)
ƒ I_SD ≤ -4.0A, di/dt ≤ -300A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.