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IRF9393PBF Datasheet, PDF (2/8 Pages) International Rectifier – Adaptor Input Switch for Notebook PC | |||
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IRF9393PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-30 âââ âââ V VGS = 0V, ID = -250μA
ÎÎVDSS/ÎTJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
âââ 0.019 âââ V/°C Reference to 25°C, ID = -1mA
âââ 13.3 âââ
e VGS = -20V, ID = -9.2A
e âââ 15.6 19.4 mΩ VGS = -10V, ID = -9.2A
âââ 25.6 32.5
e VGS = -4.5V, ID = -7.5A
VGS(th)
ÎVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-1.3 -1.8 -2.4 V
VDS = VGS, ID = -25μA
âââ -5.7 âââ mV/°C
âââ âââ -1.0 μA VDS = -24V, VGS = 0V
âââ âââ -150
VDS = -24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ -10
âââ âââ 10
VGS = -25V
μA
VGS = 25V
gfs
Forward Transconductance
Qg
h Total Gate Charge
Qg
h Total Gate Charge
Qgs
h Gate-to-Source Charge
Qgd
h Gate-to-Drain Charge
RG
h Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
13 âââ âââ
âââ 14 âââ
âââ 25 38
âââ 3.5 âââ
âââ 6.4 âââ
âââ 15 âââ
âââ 16 âââ
âââ 44 âââ
âââ 55 âââ
S VDS = -10V, ID = -7.5A
nC VDS = -15V, VGS = -4.5V, ID = - 7.5A
VGS = -10V
nC VDS = -15V
ID = -7.5A
Ω
e VDD = -15V, VGS = -4.5V
ID = -1.0A
ns
RG = 6.8Ω
tf
Fall Time
Ciss
Input Capacitance
âââ 49 âââ
âââ 1110 âââ
See Figs. 20a &20b
VGS = 0V
Coss
Output Capacitance
âââ 230 âââ pF VDS = -25V
Crss
Reverse Transfer Capacitance
âââ 160 âââ
Æ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
 Avalanche Current
Typ.
âââ
âââ
Max.
100
-7.5
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
âââ âââ -2.5
âââ âââ -75
âââ âââ -1.2
MOSFET symbol
D
showing the
A
G
integral reverse
S
p-n junction diode.
e V TJ = 25°C, IS = -2.5A, VGS = 0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Thermal Resistance
âââ 24 36 ns TJ = 25°C, IF = -2.5A, VDD = -24V
e âââ 15 23 nC di/dt = 100A/μs
Parameter
RθJL
g Junction-to-Drain Lead
RθJA
f Junction-to-Ambient
Typ.
âââ
âââ
Max.
20
50
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting TJ = 25°C, L = 3.5mH, RG = 25Ω, IAS = -7.5A.
 Pulse width ⤠400μs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board.
Â
Rθ is measured at TJ of approximately 90°C.
 For DESIGN AID ONLY, not subject to production testing.
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