IRF9388PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – Industry-Standard SO8 Package

IRF9388PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
Drain-to-Source Breakdown Voltage
-30
ΔΒV_DSS/ΔT_J Breakdown Voltage Temp. Coefficient
–––
R_DS(on)
Static Drain-to-Source On-Resistance
–––
–––
V_GS(th)
Gate Threshold Voltage
-1.3
ΔV_GS(th)
Gate Threshold Voltage Coefficient
–––
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
20
Q_g
h Total Gate Charge
–––
Q_g
h Total Gate Charge
–––
Q_gs
Q_gd
h Gate-to-Source Charge
h Gate-to-Drain Charge
–––
–––
R_G
h Gate Resistance
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
Avalanche Characteristics
Typ.
–––
0.021
8.5
10
-1.8
-5.8
–––
–––
–––
–––
–––
18
35
5.3
8.5
15
19
57
80
66
1680
350
220
Max. Units
Conditions
––– V VGS = 0V, ID = -250μA
–––
–––
11.9
V/°C Reference to 25°C, ID = -1mA
e _mΩ V_GS = -20V, I_D = -12A
e V_GS = -10V, I_D = -12A
-2.4
–––
V
mV/°C
V_DS
=
V_GS,
I_D
=
-25μA
-1.0
-150
μA ^{VDS = -24V, VGS = 0V}
V_DS = -24V, V_GS = 0V, T_J = 125°C
10
μA ^{VGS = -25V}
10
V_GS = 25V
––– S VDS = -10V, ID = -9.6A
––– nC VDS = -15V, VGS = -4.5V, ID = - 9.6A
52
V_GS = -10V
––– nC VDS = -15V
–––
I_D = -9.6A
––– Ω
–––
e V_DD = -15V, V_GS = -4.5V
–––
–––
ns
I_D = -1.0A
R_G = 6.8Ω
–––
See Figs. 20a &20b
–––
V_GS = 0V
––– pF VDS = -25V
–––
ƒ = 1.0MHz
Parameter
E_AS
d Single Pulse Avalanche Energy
I_AR
™ Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
120
-9.6
Units
mJ
A
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
Min. Typ. Max. Units
Conditions
––– ––– -2.5
––– ––– -96
––– ––– -1.2
MOSFET symbol
D
showing the
A
integral reverse
G
p-n junction diode.
S
e V T_J = 25°C, I_S = -2.5A, V_GS = 0V
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Thermal Resistance
––– 51 76 ns T_J = 25°C, I_F = -2.5A, VDD = -24V
e ––– 35 53 nC di/dt = 100A/μs
Parameter
R_θJL
R_θJA
g Junction-to-Drain Lead
f Junction-to-Ambient
Typ.
Max.
Units
–––
20
°C/W
–––
50
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting T_J = 25°C, L = 2.6mH, R_G = 25Ω, I_AS = -9.6A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
… R_θ is measured at T_J of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
2
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