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IRF9362PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – Industry-Standard SO-8 Package | |||
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IRF9362PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
Drain-to-Source Breakdown Voltage
-30
âÎVDSS/âTJ
Breakdown Voltage Temp. Coefficient
âââ
RDS(on)
Static Drain-to-Source On-Resistance
âââ
âââ
VGS(th)
Gate Threshold Voltage
-1.3
âVGS(th)
Gate Threshold Voltage Coefficient
âââ
IDSS
Drain-to-Source Leakage Current
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
gfs
Forward Transconductance
12
Qg
h Total Gate Charge
âââ
Qg
h Total Gate Charge
âââ
Qgs
h Gate-to-Source Charge
âââ
Qgd
h Gate-to-Drain Charge
âââ
RG
h Gate Resistance
âââ
td(on)
Turn-On Delay Time
âââ
tr
Rise Time
âââ
td(off)
Turn-Off Delay Time
âââ
tf
Fall Time
âââ
Ciss
Input Capacitance
âââ
Coss
Output Capacitance
âââ
Crss
Reverse Transfer Capacitance
âââ
Avalanche Characteristics
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
 Avalanche Current
Diode Characteristics
Parameter
Min.
IS
Continuous Source Current
âââ
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
âââ
VSD
Diode Forward Voltage
âââ
trr
Reverse Recovery Time
âââ
Qrr
Reverse Recovery Charge
âââ
Thermal Resistance
Parameter
RθJL
g Junction-to-Drain Lead
RθJA
f Junction-to-Ambient
Typ.
âââ
0.021
17.0
25.7
-1.8
-5.8
âââ
âââ
âââ
âââ
âââ
13
26
3.8
6.3
17
5.2
5.9
115
53
1300
250
170
Typ.
âââ
âââ
âââ
32
20
Max.
âââ
âââ
21.0
32.0
-2.4
âââ
-1.0
-150
-100
100
âââ
âââ
39
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Units
Conditions
V VGS = 0V, ID = -250µA
V/°C
mâ¦
Reference to 25°C, ID = -1mA
e VGS = -10V, ID = -8.0A
e VGS = -4.5V, ID = -6.4A
V VDS = VGS, ID = -25µA
mV/°C
µA VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
nA VGS = -20V
VGS = 20V
S VDS = -10V, ID = -6.4A
nC VDS = -15V, VGS = -4.5V, ID = - 6.4A
VGS = -10V
nC VDS = -15V
ID = -6.4A
â¦
e VDD = -30V, VGS = -10V
ns ID = -1.0A
RG = 6.0â¦
See Figs. 19a & 19b
VGS = 0V
pF VDS = -25V
Æ = 1.0kHz
Typ.
âââ
âââ
Max.
94
-6.4
Units
mJ
A
Max.
-2.0
-64
-1.2
48
30
Units
Conditions
MOSFET symbol
D
showing the
A
integral reverse
G
p-n junction diode.
S
e V TJ = 25°C, IS = -2.0A, VGS = 0V
ns TJ = 25°C, IF = -2.0A, VDD = -24V
e nC di/dt = 100/µs
Typ.
âââ
âââ
Max.
20
62.5
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting TJ = 25°C, L = 4.6mH, RG = 25â¦, IAS = -6.4A.
 Pulse width ⤠400µs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board.
Â
Rθ is measured at TJ of approximately 90°C.
 For DESIGN AID ONLY, not subject to production testing.
2
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