IRF9328TRPBF Datasheet, PDF (2/8 Pages) International Rectifier – Charge and Discharge Switch for Notebook PC Battery Application

IRF9328PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
ΔΒV_DSS/ΔT_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-30 ––– ––– V VGS = 0V, ID = -250μA
––– 0.021 ––– V/°C Reference to 25°C, ID = -1mA
–––
–––
10
16.1
11.9
19.7
e _mΩ V_GS = -10V, I_D = -12A
e V_GS = -4.5V, I_D = -9.6A
V_GS(th)
ΔV_GS(th)
I_DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-1.3 -1.8 -2.4 V
V_DS = V_GS, I_D = -25μA
––– -5.8 ––– mV/°C
––– ––– -1.0 _μA VDS = -24V, VGS = 0V
––– ––– -150
V_DS = -24V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 _nA VGS = -20V
––– ––– 100
V_GS = 20V
gfs
Forward Transconductance
Q_g
h Total Gate Charge
Q_g
h Total Gate Charge
Q_gs
h Gate-to-Source Charge
Q_gd
h Gate-to-Drain Charge
R_G
h Gate Resistance
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
20 ––– –––
––– 18 –––
––– 35 52
––– 5.3 –––
––– 8.5 –––
––– 15 –––
––– 19 –––
––– 57 –––
––– 80 –––
S VDS = -10V, ID = -9.6A
nC VDS = -15V, VGS = -4.5V, ID = - 9.6A
V_GS = -10V
nC VDS = -15V
I_D = -9.6A
Ω
e V_DD = -15V, V_GS = -4.5V
I_D = -1.0A
ns
R_G = 6.8Ω
t_f
Fall Time
C_iss
Input Capacitance
C_oss
Output Capacitance
––– 66 –––
––– 1680 –––
––– 350 –––
See Figs. 20a &20b
V_GS = 0V
pF VDS = -25V
C_rss
Reverse Transfer Capacitance
Avalanche Characteristics
––– 220 –––
ƒ = 1.0kHz
Parameter
E_AS
d Single Pulse Avalanche Energy
I_AR
™ Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
120
-9.6
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
––– ––– -2.5
––– ––– -96
––– ––– -1.2
MOSFET symbol
D
showing the
A
G
integral reverse
S
p-n junction diode.
e V T_J = 25°C, I_S = -2.5A, V_GS = 0V
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Thermal Resistance
––– 51
––– 35
76
53
e ^{ns TJ = 25°C, IF = -2.5A, VDD = -24V}
nC di/dt = 100A/μs
Parameter
R_θJL
g Junction-to-Drain Lead
R_θJA
f Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting T_J = 25°C, L = 2.6mH, R_G = 25Ω, I_AS = -9.6A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
… R_θ is measured at T_J of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
2
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