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IRF9328PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF9328PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ÎÎVDSS/ÎTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-30 âââ âââ V VGS = 0V, ID = -250μA
âââ 0.021 âââ V/°C Reference to 25°C, ID = -1mA
âââ
âââ
10
16.1
11.9
19.7
e mΩ VGS = -10V, ID = -12A
e VGS = -4.5V, ID = -9.6A
VGS(th)
ÎVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-1.3 -1.8 -2.4 V
VDS = VGS, ID = -25μA
âââ -5.8 âââ mV/°C
âââ âââ -1.0 μA VDS = -24V, VGS = 0V
âââ âââ -150
VDS = -24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ -100 nA VGS = -20V
âââ âââ 100
VGS = 20V
gfs
Forward Transconductance
Qg
h Total Gate Charge
Qg
h Total Gate Charge
Qgs
h Gate-to-Source Charge
Qgd
h Gate-to-Drain Charge
RG
h Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
20 âââ âââ
âââ 18 âââ
âââ 35 52
âââ 5.3 âââ
âââ 8.5 âââ
âââ 15 âââ
âââ 19 âââ
âââ 57 âââ
âââ 80 âââ
S VDS = -10V, ID = -9.6A
nC VDS = -15V, VGS = -4.5V, ID = - 9.6A
VGS = -10V
nC VDS = -15V
ID = -9.6A
Ω
e VDD = -15V, VGS = -4.5V
ID = -1.0A
ns
RG = 6.8Ω
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
âââ 66 âââ
âââ 1680 âââ
âââ 350 âââ
See Figs. 20a &20b
VGS = 0V
pF VDS = -25V
Crss
Reverse Transfer Capacitance
Avalanche Characteristics
âââ 220 âââ
Æ = 1.0kHz
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
 Avalanche Current
Diode Characteristics
Typ.
âââ
âââ
Max.
120
-9.6
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
âââ âââ -2.5
âââ âââ -96
âââ âââ -1.2
MOSFET symbol
D
showing the
A
G
integral reverse
S
p-n junction diode.
e V TJ = 25°C, IS = -2.5A, VGS = 0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Thermal Resistance
âââ 51
âââ 35
76
53
e ns TJ = 25°C, IF = -2.5A, VDD = -24V
nC di/dt = 100A/μs
Parameter
RθJL
g Junction-to-Drain Lead
RθJA
f Junction-to-Ambient
Typ.
âââ
âââ
Max.
20
50
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting TJ = 25°C, L = 2.6mH, RG = 25Ω, IAS = -9.6A.
 Pulse width ⤠400μs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board.
Â
Rθ is measured at TJ of approximately 90°C.
 For DESIGN AID ONLY, not subject to production testing.
2
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