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IRF9317TRPBF Datasheet, PDF (2/8 Pages) International Rectifier – charge and discharge switch for notebook pc battery application | |||
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IRF9317PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
Drain-to-Source Breakdown Voltage
-30
ÎÎVDSS/ÎTJ Breakdown Voltage Temp. Coefficient
âââ
RDS(on)
Static Drain-to-Source On-Resistance
âââ
âââ
VGS(th)
Gate Threshold Voltage
-1.3
ÎVGS(th)
Gate Threshold Voltage Coefficient
âââ
IDSS
Drain-to-Source Leakage Current
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
gfs
Forward Transconductance
36
Qg
h Total Gate Charge
âââ
Qg
h Total Gate Charge
âââ
Qgs
h Gate-to-Source Charge
âââ
Qgd
h Gate-to-Drain Charge
âââ
RG
h Gate Resistance
âââ
td(on)
Turn-On Delay Time
âââ
tr
Rise Time
âââ
td(off)
Turn-Off Delay Time
âââ
tf
Fall Time
âââ
Ciss
Input Capacitance
âââ
Coss
Output Capacitance
âââ
Crss
Reverse Transfer Capacitance
âââ
Avalanche Characteristics
Typ.
âââ
0.022
5.4
8.3
-1.8
-5.7
âââ
âââ
âââ
âââ
âââ
31
61
9
14
14
19
64
160
120
2820
640
370
Max. Units
Conditions
âââ V VGS = 0V, ID = -250µA
âââ
6.6
10.2
V/°C Reference to 25°C, ID = -1mA
e mΩ VGS = -10V, ID = -16A
e VGS = -4.5V, ID = -13A
-2.4 V
âââ mV/°C VDS = VGS, ID = -50µA
-1.0
-150
µA VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
-100
100
nA VGS = -20V
VGS = 20V
âââ S VDS = -10V, ID = -13A
âââ nC VDS = -15V, VGS = -4.5V, ID = - 13A
92
VGS = -10V
âââ nC VDS = -15V
âââ
ID = -13A
âââ Ω
âââ
e VDD = -15V, VGS = -4.5V
âââ ns ID = -1.0A
âââ
RG = 6.8Ω
âââ
See Figs. 20a &20b
âââ
VGS = 0V
âââ pF VDS = -15V
âââ
Æ = 1.0MHz
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
 Avalanche Current
Diode Characteristics
Typ.
âââ
âââ
Max.
330
-13
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
âââ âââ -2.5
âââ âââ -130
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
D
G
S
e âââ âââ -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Thermal Resistance
âââ 33 50 ns TJ = 25°C, IF = -2.5A, VDD = -24V
e âââ 30 45 nC di/dt = 100A/µs
Parameter
RθJL
g Junction-to-Drain Lead
RθJA
f Junction-to-Ambient
Typ.
âââ
âââ
Max.
20
50
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting TJ = 25°C, L = 4.3mH, RG = 25Ω, IAS = -13A.
 Pulse width ⤠400µs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board.
Â
Rθ is measured at TJ of approximately 90°C.
 For DESIGN AID ONLY, not subject to production testing.
2
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