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IRF9310PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF9310PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
Drain-to-Source Breakdown Voltage
-30
âÎVDSS/âTJ Breakdown Voltage Temp. Coefficient
âââ
RDS(on)
Static Drain-to-Source On-Resistance
âââ
âââ
VGS(th)
Gate Threshold Voltage
-1.3
âVGS(th)
Gate Threshold Voltage Coefficient
âââ
IDSS
Drain-to-Source Leakage Current
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
gfs
Forward Transconductance
39
Qg
h Total Gate Charge
âââ
Qg
h Total Gate Charge
âââ
Qgs
h Gate-to-Source Charge
âââ
Qgd
h Gate-to-Drain Charge
âââ
RG
h Gate Resistance
âââ
td(on)
Turn-On Delay Time
âââ
tr
Rise Time
âââ
td(off)
Turn-Off Delay Time
âââ
tf
Fall Time
âââ
Ciss
Input Capacitance
âââ
Coss
Output Capacitance
âââ
Crss
Reverse Transfer Capacitance
âââ
Avalanche Characteristics
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
 Avalanche Current
Diode Characteristics
Parameter
Min.
IS
Continuous Source Current
âââ
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
âââ
VSD
Diode Forward Voltage
âââ
trr
Reverse Recovery Time
âââ
Qrr
Reverse Recovery Charge
âââ
Thermal Resistance
Parameter
RθJL
g Junction-to-Drain Lead
RθJA
f Junction-to-Ambient
Typ.
âââ
0.020
3.9
5.8
-1.8
-5.8
âââ
âââ
âââ
âââ
âââ
58
110
17
28
2.8
25
47
65
70
5250
1300
880
Typ.
âââ
âââ
âââ
71
12
Max. Units
Conditions
âââ V VGS = 0V, ID = -250µA
âââ
4.6
6.8
V/°C Reference to 25°C, ID = -1mA
ee mâ¦
VGS = -10V, ID = -20A
VGS = -4.5V, ID = -16A
-2.4
V VDS = VGS, ID = -100µA
âââ mV/°C
-1.0
-150
µA VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
-100
100
nA VGS = -20V
VGS = 20V
âââ S VDS = -10V, ID = -16A
âââ nC VDS = -15V, VGS = -4.5V, ID = - 16A
165
VGS = -10V
âââ nC VDS = -15V
âââ
ID = -16A
âââ â¦
âââ
e VDD = -15V, VGS = -4.5V
âââ ns ID = -1.0A
âââ
RG = 1.8â¦
âââ
See Figs. 20a &20b
âââ
VGS = 0V
âââ pF VDS = -15V
âââ
Æ = 1.0MHz
Typ.
âââ
âââ
Max.
630
-16
Units
mJ
A
Max. Units
Conditions
-2.5
-160
-1.2
MOSFET symbol
D
showing the
A
integral reverse
G
p-n junction diode.
S
e V TJ = 25°C, IS = -2.5A, VGS = 0V
107 ns TJ = 25°C, IF = -2.5A, VDD = -24V
e 18 nC di/dt = 100A/µs
Typ.
âââ
âââ
Max.
20
50
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting TJ = 25°C, L = 4.9mH, RG = 25â¦, IAS = -16A.
 Pulse width ⤠400µs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board.
Â
Rθ is measured at TJ of approximately 90°C.
 For DESIGN AID ONLY, not subject to production testing.
2
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