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| IRF8910PBF-1_15 Datasheet, PDF (2/10 Pages) International Rectifier – Industry-standard pinout SO-8 Package | |||
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IRF8910PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ÎÎVDSS/ÎTJ
RDS(on)
VGS(th)
ÎVGS(th)/ÎTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
20 âââ âââ V VGS = 0V, ID = 250μA
âââ 0.015 âââ
âââ 10.7 13.4
âââ 14.6 18.3
V/°C Reference to 25°C, ID = 1mA
e mΩ VGS = 10V, ID = 10A
e VGS = 4.5V, ID = 8.0A
1.65 âââ 2.55 V VDS = VGS, ID = 250μA
âââ -4.8 âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 μA VDS = 16V, VGS = 0V
âââ âââ 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
24 âââ âââ
âââ 7.4 11
S VDS = 10V, ID = 8.2A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 2.4 âââ
âââ 0.80 âââ
âââ 2.5 âââ
âââ 1.7 âââ
VDS = 10V
nC VGS = 4.5V
ID = 8.2A
See Fig. 6
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 3.3 âââ
Qoss
Output Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
âââ 4.4 âââ
âââ 6.2 âââ
âââ 10 âââ
âââ 9.7 âââ
âââ 4.1 âââ
nC VDS = 10V, VGS = 0V
VDD = 10V, VGS = 4.5V
ns ID = 8.2A
Clamped Inductive Load
Ciss
Input Capacitance
âââ 960 âââ
VGS = 0V
Coss
Output Capacitance
âââ 300 âââ pF VDS = 10V
Crss
Reverse Transfer Capacitance
âââ 160 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
19
8.2
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
17
6.5
Max.
2.5
82
1.0
26
9.7
Units
Conditions
MOSFET symbol
D
A showing the
integral reverse
G
e p-n junction diode.
S
V TJ = 25°C, IS = 8.2A, VGS = 0V
e ns TJ = 25°C, IF = 8.2A, VDD = 10V
nC di/dt = 100A/μs
2
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June 30, 2014
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