IRF8734PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power

IRF8734PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250µA
∆ΒV_DSS/∆T_J
R_DS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
––– 0.023 –––
––– 2.9 3.5
––– 4.2 5.1
V/°C Reference to 25°C, ID = 1mA
ee _mΩ
V_GS = 10V, I_D = 21A
V_GS = 4.5V, I_D = 17A
V_GS(th)
∆V_GS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
1.35 1.80 2.35 V _{VDS = VGS, ID = 50µA}
––– -6.5 ––– mV/°C
I_DSS
Drain-to-Source Leakage Current
––– ––– 1.0
µA ^{VDS = 24V, VGS = 0V}
––– ––– 150
V_DS = 24V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 _nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
gfs
Forward Transconductance
85 ––– ––– S VDS = 15V, ID = 17A
Q_g
Total Gate Charge
––– 20 30
Q_gs1
Pre-Vth Gate-to-Source Charge
––– 5.2 –––
V_DS = 15V
Q_gs2
Post-Vth Gate-to-Source Charge
––– 2.3 ––– _nC VGS = 4.5V
Q_gd
Gate-to-Drain Charge
––– 6.9 –––
I_D = 17A
Q_godr
Gate Charge Overdrive
––– 5.4 –––
See Figs. 16a &16b
Q_sw
Switch Charge (Q_gs2 + Q_gd)
––– 9.2 –––
Q_oss
Output Charge
––– 15 ––– nC VDS = 16V, VGS = 0V
R_G
t_d(on)
Gate Resistance
Turn-On Delay Time
––– 1.7 3.1
––– 13 –––
Ω
e V_DD = 15V, V_GS = 4.5V
t_r
t_d(off)
Rise Time
Turn-Off Delay Time
––– 16 ––– _ns ID = 17A
––– 15 –––
R_G = 1.8Ω
t_f
Fall Time
––– 8.0 –––
See Figs. 15a &15b
C_iss
Input Capacitance
––– 3175 –––
V_GS = 0V
C_oss
Output Capacitance
––– 627 ––– pF VDS = 15V
C_rss
Reverse Transfer Capacitance
––– 241 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
E_AS
d Single Pulse Avalanche Energy
I_AR
™ Avalanche Current
Typ.
–––
–––
Max.
216
17
Units
mJ
A
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
20
25
Max. Units
Conditions
MOSFET symbol
3.1
showing the
A
integral reverse
168
p-n junction diode.
1.0
e V T_J = 25°C, I_S = 17A, V_GS = 0V
30
38
e ^{ns TJ = 25°C, IF = 17A, VDD = 15V}
nC di/dt = 345A/µs
2
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