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IRF8734PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF8734PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
30 âââ âââ V VGS = 0V, ID = 250µA
âÎVDSS/âTJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
âââ 0.023 âââ
âââ 2.9 3.5
âââ 4.2 5.1
V/°C Reference to 25°C, ID = 1mA
ee mâ¦
VGS = 10V, ID = 21A
VGS = 4.5V, ID = 17A
VGS(th)
âVGS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
1.35 1.80 2.35 V VDS = VGS, ID = 50µA
âââ -6.5 âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0
µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
85 âââ âââ S VDS = 15V, ID = 17A
Qg
Total Gate Charge
âââ 20 30
Qgs1
Pre-Vth Gate-to-Source Charge
âââ 5.2 âââ
VDS = 15V
Qgs2
Post-Vth Gate-to-Source Charge
âââ 2.3 âââ nC VGS = 4.5V
Qgd
Gate-to-Drain Charge
âââ 6.9 âââ
ID = 17A
Qgodr
Gate Charge Overdrive
âââ 5.4 âââ
See Figs. 16a &16b
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 9.2 âââ
Qoss
Output Charge
âââ 15 âââ nC VDS = 16V, VGS = 0V
RG
td(on)
Gate Resistance
Turn-On Delay Time
âââ 1.7 3.1
âââ 13 âââ
â¦
e VDD = 15V, VGS = 4.5V
tr
td(off)
Rise Time
Turn-Off Delay Time
âââ 16 âââ ns ID = 17A
âââ 15 âââ
RG = 1.8â¦
tf
Fall Time
âââ 8.0 âââ
See Figs. 15a &15b
Ciss
Input Capacitance
âââ 3175 âââ
VGS = 0V
Coss
Output Capacitance
âââ 627 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 241 âââ
Æ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
 Avalanche Current
Typ.
âââ
âââ
Max.
216
17
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
20
25
Max. Units
Conditions
MOSFET symbol
3.1
showing the
A
integral reverse
168
p-n junction diode.
1.0
e V TJ = 25°C, IS = 17A, VGS = 0V
30
38
e ns TJ = 25°C, IF = 17A, VDD = 15V
nC di/dt = 345A/µs
2
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