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| IRF8721PBF-1_15 Datasheet, PDF (2/9 Pages) International Rectifier – Industry-standard pinout SO-8 Package | |||
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IRF8721PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ÎÎVDSS/ÎTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ÎVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Avalanche Characteristics
30
âââ
âââ
âââ
1.35
âââ
âââ
âââ
âââ
âââ
27
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
0.021
6.9
10.6
âââ
-6.2
âââ
âââ
âââ
âââ
âââ
8.3
2.0
1.0
3.2
2.0
4.2
5.0
1.8
8.2
11
8.1
7.0
1040
229
114
âââ
âââ
8.5
12.5
2.35
âââ
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
e mΩ VGS = 10V, ID = 14A
e VGS = 4.5V, ID = 11A
V VDS = VGS, ID = 25μA
mV/°C
1.0
150
100
-100
âââ
12
μA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 11A
âââ
VDS = 15V
âââ nC VGS = 4.5V
âââ
ID = 11A
âââ
See Fig. 16a and 16b
âââ
âââ nC VDS = 16V, VGS = 0V
3.0 Ω
âââ
VDD = 15V, VGS = 4.5V
âââ
ID = 11A
âââ ns RG = 1.8Ω
âââ
See Fig. 15a
âââ
VGS = 0V
âââ pF VDS = 15V
âââ
Æ = 1.0MHz
Parameter
EAS
IAR
d Single Pulse Avalanche Energy
 Avalanche Current
Diode Characteristics
Typ.
âââ
âââ
Max.
68
11
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 3.1
MOSFET symbol
D
(Body Diode)
A showing the
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ âââ 112
integral reverse
G
âââ âââ 1.0
âââ 14 21
âââ 15 23
p-n junction diode.
S
e V TJ = 25°C, IS = 11A, VGS = 0V
ns TJ = 25°C, IF = 11A, VDD = 15V
e nC di/dt = 300A/μs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com © 2013 International Rectifier
October 02, 2013
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