IRF8721GPBF Datasheet, PDF(2/9 Page) International Rectifier

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

IRF8721GPBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFETPower MOSFET

◁

IRF8721GPbF

Static @ TJ = 25Â°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

âÎVDSS/âTJ

RDS(on)

VGS(th)

âVGS(th)

IDSS

IGSS

gfs

Qgs1

Qgs2

Qgd

Qgodr

Qsw

Qoss

td(on)

td(off)

Ciss

Coss

Crss

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Output Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

âââ

1.35

âââ

0.021

6.9

10.6

âââ

-6.2

âââ

8.3

2.0

1.0

3.2

2.0

4.2

5.0

1.8

8.2

8.1

7.0

1040

229

114

âââ

8.5

12.5

2.35

âââ

V VGS = 0V, ID = 250ÂµA

V/Â°C Reference to 25Â°C, ID = 1mA

e mâ¦ VGS = 10V, ID = 14A

e VGS = 4.5V, ID = 11A

V VDS = VGS, ID = 25ÂµA

mV/Â°C

1.0

150

100

-100

âââ

ÂµA VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125Â°C

nA VGS = 20V

VGS = -20V

S VDS = 15V, ID = 11A

âââ

VDS = 15V

âââ nC VGS = 4.5V

âââ

ID = 11A

âââ

See Fig. 16a and 16b

âââ

âââ nC VDS = 16V, VGS = 0V

3.0 â¦

âââ

VDD = 15V, VGS = 4.5V

âââ

ID = 11A

âââ ns RG = 1.8â¦

âââ

See Fig. 15a

âââ

VGS = 0V

âââ pF VDS = 15V

âââ

Æ = 1.0MHz

Avalanche Characteristics

Parameter

EAS

IAR

d Single Pulse Avalanche Energy

Â Avalanche Current

Diode Characteristics

Typ.

âââ

Max.

Units

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

âââ âââ 3.1

MOSFET symbol

(Body Diode)

ISM

Pulsed Source Current

ÃÂ (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

âââ âââ 112

âââ âââ 1.0

âââ 14 21

âââ 15 23

A showing the

integral reverse

p-n junction diode.

e V TJ = 25Â°C, IS = 11A, VGS = 0V

ns TJ = 25Â°C, IF = 11A, VDD = 15V

e nC di/dt = 300A/Âµs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

www.irf.com

▷