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| IRF840APBF Datasheet, PDF (2/8 Pages) International Rectifier – SMPS MOSFET | |||
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IRF840APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance âââ
Gate Threshold Voltage
2.0
IDSS
Drain-to-Source Leakage Current
âââ
âââ
Gate-to-Source Forward Leakage
âââ
IGSS
Gate-to-Source Reverse Leakage
âââ
âââ
0.58
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
0.85
4.0
25
250
100
-100
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
⦠VGS = 10V, ID = 4.8A Â
V VDS = VGS, ID = 250µA
µA VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
nA VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
3.7 âââ âââ S VDS = 50V, ID = 4.8A
âââ âââ 38
ID = 8.0A
Qgs
Gate-to-Source Charge
âââ âââ 9.0 nC VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
âââ âââ 18
VGS = 10V, See Fig. 6 and 13 Â
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
âââ 11 âââ
VDD = 250V
âââ 23 âââ ns ID = 8.0A
âââ 26 âââ
RG = 9.1â¦
âââ 19 âââ
RD = 31â¦,See Fig. 10 Â
Ciss
Input Capacitance
Coss
Output Capacitance
âââ 1018 âââ
âââ 155 âââ
VGS = 0V
VDS = 25V
Crss
Reverse Transfer Capacitance
âââ 8.0 âââ pF Æ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
âââ 1490 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
âââ 42 âââ
âââ 56 âââ
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Avalanche Characteristics
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
âââ
510
mJ
âââ
8.0
A
âââ
13
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
Diode Characteristics
âââ
0.50
1.0
âââ
°C/W
62
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
MOSFET symbol
D
âââ âââ 8.0
A showing the
integral reverse
G
âââ âââ 32
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
âââ âââ 2.0 V TJ = 25°C, IS = 8.0A, VGS = 0V Â
âââ 422 633 ns TJ = 25°C, IF = 8.0A
âââ 2.16 3.24 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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