IRF840A Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)

IRF840A
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage 500
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient –––
R_DS(on)
Static Drain-to-Source On-Resistance –––
V_GS(th)
Gate Threshold Voltage
2.0
I_DSS
Drain-to-Source Leakage Current
–––
–––
Gate-to-Source Forward Leakage
–––
I_GSS
Gate-to-Source Reverse Leakage
–––
–––
0.58
–––
–––
–––
–––
–––
–––
–––
–––
0.85
4.0
25
250
100
-100
V V_GS = 0V, I_D = 250µA
V/°C Reference to 25°C, I_D = 1mA
Ω V_GS = 10V, I_D = 4.8A „
V V_DS = V_GS, I_D = 250µA
µA ^{VDS = 500V, VGS = 0V}
V_DS = 400V, V_GS = 0V, T_J = 125°C
nA ^{VGS = 30V}
V_GS = -30V
Dynamic @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
g_fs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
3.7 ––– –––
––– ––– 38
––– ––– 9.0
––– ––– 18
––– 11 –––
––– 23 –––
––– 26 –––
––– 19 –––
––– 1018 –––
––– 155 –––
––– 8.0 –––
––– 1490 –––
––– 42 –––
––– 56 –––
S V_DS = 50V, I_D = 4.8A
I_D = 8.0A
nC V_DS = 400V
V_GS = 10V, See Fig. 6 and 13 „
V_DD = 250V
ns ^{ID = 8.0A}
R_G = 9.1Ω
R_D = 31Ω,See Fig. 10 „
V_GS = 0V
V_DS = 25V
pF ƒ = 1.0MHz, See Fig. 5
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 400V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 400V …
Avalanche Characteristics
Parameter
Typ.
Max.
Units
E_AS
Single Pulse Avalanche Energy‚
I_AR
Avalanche Current
E_AR
Repetitive Avalanche Energy
Thermal Resistance
–––
510
mJ
–––
8.0
A
–––
13
mJ
Parameter
Typ.
Max.
Units
R_θJC
Junction-to-Case
R_θCS
Case-to-Sink, Flat, Greased Surface
R_θJA
Junction-to-Ambient
Diode Characteristics
–––
0.50
1.0
–––
°C/W
62
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
MOSFET symbol
D
––– ––– 8.0
A ^{showing the}
integral reverse
G
––– ––– 32
p-n junction diode.
S
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
––– ––– 2.0 V T_J = 25°C, I_S = 8.0A, V_GS = 0V „
––– 422 633 ns T_J = 25°C, I_F = 8.0A
––– 2.0 3.0 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
2
www.irf.com