|
IRF820ASPBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET | |||
|
◁ |
IRF820AS/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min.
500
âââ
âââ
2.0
âââ
âââ
âââ
âââ
Typ.
âââ
0.60
âââ
âââ
âââ
âââ
âââ
âââ
Max.
âââ
âââ
3.0
4.5
25
250
100
-100
Units
V
V/°C
â¦
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 1.5A Â
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
Qg
Total Gate Charge
1.4 âââ âââ
âââ âââ 17
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
âââ âââ 4.3
âââ âââ 8.5
td(on)
tr
Turn-On Delay Time
Rise Time
âââ 8.1 âââ
âââ 12 âââ
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ 16 âââ
âââ 13 âââ
Ciss
Input Capacitance
Coss
Output Capacitance
âââ 340 âââ
âââ 53 âââ
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
âââ 2.7 âââ
âââ 490 âââ
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
âââ 15 âââ
âââ 28 âââ
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 1.5AÂ
ID = 2.5A
VDS = 400V
VGS = 10V, See Fig. 6 and 13 ÂÂ
VDD = 250V
ID = 2.5A
RG = 21â¦
RD = 97â¦,See Fig. 10 ÂÂ
VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5Â
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Â
Parameter
EAS
Single Pulse Avalanche EnergyÂÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
140
2.5
5.0
Units
mJ
A
mJ
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
Typ.
âââ
âââ
Max.
2.5
62
Units
°C/W
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ÂÂ
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 2.5
A showing the
integral reverse
G
âââ âââ 10
p-n junction diode.
S
âââ âââ 1.6 V TJ = 25°C, IS = 2.5A, VGS = 0V Â
âââ 330 500 ns TJ = 25°C, IF = 2.5A
âââ 760 1140 nC di/dt = 100A/µs ÂÂ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
|
▷ |