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| IRF820A Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A) | |||
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IRF820A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
500 âââ âââ
âââ 0.60 âââ
âââ âââ 3.0
2.0 âââ 4.5
V
V/°C
â¦
V
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 1.5A Â
VDS = VGS, ID = 250µA
âââ âââ 25
âââ âââ 250
µA VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
1.4 âââ âââ
âââ âââ 17
S VDS = 50V, ID = 1.5A
ID = 2.5A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
âââ âââ 4.3
âââ âââ 8.5
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13 Â
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
âââ 8.1 âââ
VDD = 250V
âââ 12 âââ ns ID = 2.5A
âââ 16 âââ
RG = 21â¦
âââ 13 âââ
RD = 97â¦,See Fig. 10 Â
Ciss
Input Capacitance
Coss
Output Capacitance
âââ 340 âââ
âââ 53 âââ
VGS = 0V
VDS = 25V
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
âââ 2.7 âââ
âââ 490 âââ
pF Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
âââ 15 âââ
âââ 28 âââ
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
140
2.5
5.0
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
Diode Characteristics
âââ
0.50
âââ
2.5
âââ
°C/W
62
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
MOSFET symbol
D
âââ âââ 2.5
A showing the
integral reverse
G
âââ âââ 10
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
âââ âââ 1.6 V TJ = 25°C, IS = 2.5A, VGS = 0V Â
âââ 330 500 ns TJ = 25°C, IF = 2.5A
âââ 760 1140 nC di/dt = 100A/µs Â
ton
Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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