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| IRF8113TRPBF Datasheet, PDF (2/10 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power | |||
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IRF8113
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
30 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.024 âââ
âââ 4.7 5.6
âââ 5.8 6.8
V/°C Reference to 25°C, ID = 1mA
e m⦠VGS = 10V, ID = 17.2A
e VGS = 4.5V, ID = 13.8A
1.5 âââ 2.2 V VDS = VGS, ID = 250µA
âââ - 5.4 âââ mV/°C
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
73 âââ âââ S VDS = 15V, ID = 13.3A
âââ 24 36
âââ 6.2 âââ
VDS = 15V
âââ 2.0 âââ nC VGS = 4.5V
âââ 8.5 âââ
ID = 13.3A
âââ 7.3 âââ
See Fig. 16
âââ 10.5 âââ
âââ 10 âââ nC VDS = 10V, VGS = 0V
âââ 0.8 1.5
âââ 13 âââ
â¦
e VDD = 15V, VGS = 4.5V
âââ 8.9 âââ
ID = 13.3A
âââ 17 âââ ns Clamped Inductive Load
âââ 3.5 âââ
âââ 2910 âââ
âââ 600 âââ
âââ 250 âââ
VGS = 0V
pF VDS = 15V
Æ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
 Avalanche Current
Typ.
âââ
âââ
Max.
48
13.3
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min. Typ. Max. Units
Conditions
âââ âââ 3.1
MOSFET symbol
A showing the
âââ âââ 135
integral reverse
âââ âââ 1.0
p-n junction diode.
e V TJ = 25°C, IS = 13.3A, VGS = 0V
âââ 34 51 ns TJ = 25°C, IF = 13.3A, VDD = 10V
e âââ 21 32 nC di/dt = 100A/µs
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