 English |
|
|
|
|
|
|
|
| IRF7910TRPBF Datasheet, PDF (2/8 Pages) International Rectifier – Ultra-Low Gate Impedance | |||
| |||
| ◁ |
IRF7910PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
12
âââ
âââ
âââ
0.6
âââ
âââ
âââ
âââ
Typ.
âââ
0.01
11.5
20
âââ
âââ
âââ
âââ
âââ
Max.
âââ
âââ
15
50
2.0
100
250
200
-200
Units
V
V/°C
mâ¦
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 8.0A Â
VGS = 2.8V, ID = 5.0A
VDS = VGS, ID = 250µA
VDS = 9.6V, VGS = 0V
VDS = 9.6V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
18 âââ âââ
âââ 17 26
âââ 4.4 âââ
âââ 5.2 âââ
âââ 16 âââ
âââ 9.4 âââ
âââ 22 âââ
âââ 16 âââ
âââ 6.3 âââ
âââ 1730 âââ
âââ 1340 âââ
âââ 330 âââ
S VDS = 6.0V, ID = 8.0A
ID = 8.0A
nC VDS = 6.0V
VGS = 4.5V
VGS = 0V, VDS = 10V
VDD = 6.0V
ns ID = 8.0A
RG = 1.8â¦
VGS = 4.5V Â
VGS = 0V
VDS = 6.0V
pF Æ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Typ.
âââ
âââ
Max.
100
8.0
Units
mJ
A
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.85
0.70
50
60
51
60
Max.
1.8
79
1.3
âââ
75
90
77
90
Units
A
V
ns
nC
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 8.0A, VGS = 0V Â
TJ = 125°C, IS = 8.0A, VGS = 0V Â
TJ = 25°C, IF = 8.0A, VR =12V
di/dt = 100A/µs Â
TJ = 125°C, IF = 8.0A, VR =12V
di/dt = 100A/µs Â
www.irf.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese