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| IRF7855TRPBF Datasheet, PDF (2/8 Pages) International Rectifier – Primary Side Switch in Bridge Topology in Isolated DC-DC Converters | |||
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IRF7855PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60 âââ âââ V VGS = 0V, ID = 250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ
RDS(on)
Static Drain-to-Source On-Resistance âââ
72
7.4
f âââ mV/°C Reference to 25°C, ID = 1mA
9.4 m⦠VGS = 10V, ID = 12A
VGS(th)
Gate Threshold Voltage
3.0 âââ 4.9 V VDS = VGS, ID = 100µA
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 60V, VGS = 0V
âââ âââ 250
VDS = 60V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
14 âââ âââ
âââ 26 39
âââ 6.8 âââ
âââ 9.6 âââ
âââ 8.7 âââ
âââ 13 âââ
âââ 16 âââ
âââ 12 âââ
âââ 1560 âââ
âââ 440 âââ
âââ 120 âââ
âââ 1910 âââ
âââ 320 âââ
âââ 520 âââ
S VDS = 25V, ID = 7.2A
ID = 7.2A
f nC VDS = 30V
VGS = 10V
VDD = 30V
ID = 7.2A
f ns RG = 6.2â¦
VGS = 10V
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
g VGS = 0V, VDS = 48V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 48V
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
ÃÂ Avalanche Current
Typ.
âââ
âââ
Max.
540
7.2
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 2.3
MOSFET symbol
D
A showing the
âââ âââ 97
integral reverse
G
âââ âââ 1.3
âââ 33 50
âââ 38 57
f p-n junction diode.
S
V TJ = 25°C, IS = 7.2A, VGS = 0V
f ns TJ = 25°C, IF = 7.2A, VDD = 25V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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