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| IRF7854PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – Secondary Side Synchronous Rectification Switch for 12Vout | |||
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IRF7854PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
80 âââ âââ
âââ 0.095 âââ
âââ 11 13.4
3.0 âââ 4.9
âââ âââ 20
V VGS = 0V, ID = 250µA
f V/°C Reference to 25°C, ID = 1mA
m⦠VGS = 10V, ID = 10A
V VDS = VGS, ID = 100µA
µA VDS = 80V, VGS = 0V
âââ âââ 250
VDS = 80V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
12 âââ âââ
âââ 27 41
âââ 7.7 âââ
âââ 8.7 âââ
âââ 9.4 âââ
âââ 8.5 âââ
âââ 15 âââ
âââ 8.6 âââ
âââ 1620 âââ
âââ 350 âââ
âââ 86 âââ
âââ 1730 âââ
âââ 230 âââ
âââ 410 âââ
S VDS = 25V, ID = 6.0A
ID = 6.0A
f nC VDS = 40V
VGS = 10V
VDD = 40V
ID = 6.0A
f ns RG = 6.2â¦
VGS = 10V
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
g VGS = 0V, VDS = 64V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 64V
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
ÃÂ Avalanche Current
Typ.
âââ
âââ
Max.
110
6.0
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 2.3
MOSFET symbol
D
A showing the
âââ âââ 79
integral reverse
G
âââ âââ 1.3
âââ 43 65
âââ 76 110
f p-n junction diode.
S
V TJ = 25°C, IS = 6.0A, VGS = 0V
f ns TJ = 25°C, IF = 6.0A, VDD = 25V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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