 English |
|
|
|
|
|
|
|
| IRF7853TRPBF Datasheet, PDF (2/8 Pages) International Rectifier – Primary Side Switch in Bridge Topology | |||
| |||
| ◁ |
IRF7853PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 100 âââ âââ
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ 0.11 âââ
RDS(on)
Static Drain-to-Source On-Resistance âââ 14.4 18
VGS(th)
Gate Threshold Voltage
3.0 âââ 4.9
IDSS
Drain-to-Source Leakage Current
âââ âââ 20
âââ âââ 250
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100
Gate-to-Source Reverse Leakage
âââ âââ -100
Dynamic @ TJ = 25°C (unless otherwise specified)
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
f m⦠VGS = 10V, ID = 8.3A
V VDS = VGS, ID = 100µA
µA VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
11 âââ âââ
âââ 28 39
âââ 7.8 âââ
âââ 10 âââ
âââ 1.4 âââ
âââ 13 âââ
âââ 6.6 âââ
âââ 26 âââ
âââ 6.0 âââ
âââ 1640 âââ
âââ 310 âââ
âââ 71 âââ
âââ 1600 âââ
âââ 180 âââ
âââ 320 âââ
S VDS = 25V, ID = 5.0A
ID = 5.0A
nC VDS = 50V
f VGS = 10V
â¦
VDD = 50V
ID = 5.0A
ns RG = 6.2â¦
f VGS = 10V
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 80V, Æ = 1.0MHz
g VGS = 0V, VDS = 0V to 80V
Avalanche Characteristics
Parameter
EAS
IAR
d Single Pulse Avalanche Energy
ÃÂ Avalanche Current
Typ.
âââ
âââ
Max.
610
5.0
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 2.3
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
2
A showing the
âââ âââ 66
integral reverse
G
âââ âââ 1.3
p-n junction diode.
S
f V TJ = 25°C, IS = 5.0A, VGS = 0V
âââ
âââ
45
84
68
130
f ns TJ = 25°C, IF = 5.0A, VDD = 25V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese