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| IRF7842PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF7842PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
40 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.037 âââ
âââ 4.0 5.0
âââ 4.7 5.9
V/°C Reference to 25°C, ID = 1mA
e m⦠VGS = 10V, ID = 17A
e VGS = 4.5V, ID = 14A
1.35 âââ 2.25 V VDS = VGS, ID = 250µA
âââ - 5.6 âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 32V, VGS = 0V
âââ âââ 150
VDS = 32V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
81 âââ âââ S VDS = 20V, ID = 14A
Qg
Total Gate Charge
âââ 33 50
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
âââ 9.6 âââ
âââ 2.8 âââ
âââ 10 âââ
âââ 10.6 âââ
VDS = 20V
nC VGS = 4.5V
ID = 14A
âââ 12.8 âââ
âââ 18 âââ nC VDS = 16V, VGS = 0V
âââ 1.3 TBD â¦
âââ 14 âââ
e VDD = 20V, VGS = 4.5V
âââ 12 âââ
ID = 14A
âââ 21 âââ ns Clamped Inductive Load
tf
Fall Time
âââ 5.0 âââ
Ciss
Input Capacitance
âââ 4500 âââ
VGS = 0V
Coss
Output Capacitance
âââ 680 âââ pF VDS = 20V
Crss
Reverse Transfer Capacitance
âââ 310 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
50
14
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
âââ âââ 3.1
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
âââ âââ 140
âââ âââ 1.0
âââ 99 150
âââ 11 17
A showing the
integral reverse
p-n junction diode.
e V TJ = 25°C, IS = 14A, VGS = 0V
e ns TJ = 25°C, IF = 14A, VDD = 20V
nC di/dt = 100A/µs
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