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| IRF7834PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power | |||
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IRF7834PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30
âââ
âââ
âââ
1.35
âââ
âââ
0.023
3.6
4.4
âââ
- 5.2
âââ
âââ
4.5
5.5
2.25
âââ
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
e m⦠VGS = 10V, ID = 19A
e VGS = 4.5V, ID = 16A
V VDS = VGS, ID = 250µA
mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
85 âââ âââ
âââ 29 44
S VDS = 15V, ID = 16A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 7.5 âââ
VDS = 15V
âââ 2.7 âââ nC VGS = 4.5V
âââ 9.8 âââ
ID = 16A
âââ 9.0 âââ
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 12.5 âââ
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
âââ 19 âââ
âââ 13.7 âââ
âââ 14.3 âââ
âââ 18 âââ
nC VDS = 16V, VGS = 0V
e VDD = 15V, VGS = 4.5V
ID = 16A
ns Clamped Inductive Load
tf
Fall Time
âââ 5.0 âââ
Ciss
Input Capacitance
âââ 3710 âââ
VGS = 0V
Coss
Output Capacitance
âââ 810 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 350 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
25
16
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
âââ âââ 3.1
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ âââ 160
âââ âââ 1.0
âââ 21 32
âââ 13 20
A showing the
integral reverse
p-n junction diode.
e V TJ = 25°C, IS = 16A, VGS = 0V
e ns TJ = 25°C, IF = 16A, VDD = 15V
nC di/dt = 100A/µs
2
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