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| IRF7831 Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF7831
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.025 âââ
2.5 3.1 3.6
3.0 3.7 4.4
V/°C Reference to 25°C, ID = 1mA
e m⦠VGS = 10V, ID = 20A
e VGS = 4.5V, ID = 16A
1.35 âââ 2.35 V VDS = VGS, ID = 250µA
âââ - 5.7 âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 12V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -12V
gfs
Forward Transconductance
Qg
Total Gate Charge
97 âââ âââ
âââ 40 60
S VDS = 15V, ID = 16A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 12 âââ
VDS = 15V
âââ 3.1 âââ nC VGS = 4.5V
âââ 11 âââ
ID = 16A
âââ 14 âââ
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 14 âââ
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
âââ 22 âââ nC VDS = 16V, VGS = 0V
âââ 18 âââ
e VDD = 15V, VGS = 4.5V
âââ 10 âââ
ID = 16A
âââ 17 âââ ns Clamped Inductive Load
tf
Fall Time
âââ 5.3 âââ
Ciss
Input Capacitance
âââ 6240 âââ
VGS = 0V
Coss
Output Capacitance
âââ 980 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 390 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
100
16
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
âââ âââ 2.5
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
2
âââ âââ 170
A showing the
integral reverse
âââ âââ 1.2
p-n junction diode.
e V TJ = 25°C, IS = 16A, VGS = 0V
âââ 42
âââ 31
62
47
e ns TJ = 25°C, IF = 16A, VDD = 25V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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