IRF7815PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power

IRF7815PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)
Drain-to-Source Breakdown Voltage 150 ––– ––– V V_GS = 0V, I_D = 250µA
e ^{Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA}
Static Drain-to-Source On-Resistance ––– 34 43 _mΩ V_GS = 10V, I_D = 3.1A
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
3.0 4.0 5.0 V
––– -12.2 ––– mV/°C ^{VDS = VGS, ID = 100µA}
I_DSS
Drain-to-Source Leakage Current
––– ––– 20
µA ^{VDS = 150V, VGS = 0V}
––– ––– 250
V_DS = 150V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 _nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
gfs
Forward Transconductance
Q_g
Total Gate Charge
8.2 ––– –––
––– 25 38
S V_DS = 50V, I_D = 3.1A
Q_gs1
Pre-Vth Gate-to-Source Charge
––– 6.5 –––
V_DS = 75V
Q_gs2
Post-Vth Gate-to-Source Charge
––– 1.3 –––
V_GS = 10V
Q_gs
Gate-to-Source Charge
––– 7.8 ––– nC I_D = 3.1A
Q_gd
Gate-to-Drain Charge
––– 7.4 –––
See Figs. 6, 16a & 16b
Q_godr
Gate Charge Overdrive
––– 9.8 –––
Q_sw
Switch Charge (Q_gs2 + Q_gd)
––– 8..7 –––
Q_oss
R_G
t_d(on)
t_r
t_d(off)
t_f
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 10 –––
––– 1.02 –––
––– 8.4 –––
––– 3.2 –––
––– 14 –––
––– 8.3 –––
nC V_DS = 16V, V_GS = 0V
Ω
e V_DD = 75V, V_GS = 10V
ns ^{ID = 3.1A}
R_G = 1.8Ω
See Figs. 15a & 15b
C_iss
Input Capacitance
––– 1647 –––
V_GS = 0V
C_oss
Output Capacitance
––– 129 ––– pF V_DS = 75V
C_rss
Reverse Transfer Capacitance
––– 30 –––
ƒ = 1.0MHz
Avalanche Characteristics
E_AS
I_AR
d ^Parameter
Single Pulse Avalanche Energy
™ Avalanche Current
Typ.
–––
–––
Max.
529
3.1
Units
mJ
A
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
41
213
Max. Units
Conditions
MOSFET symbol
2.3
A ^{showing the}
integral reverse
41
1.3
e ^{p-n junction diode.}
V T_J = 25°C, I_S = 3.1A, V_GS = 0V
62
320
e ^{ns TJ = 25°C, IF = 3.1A, VDD = 75V}
nC di/dt = 300A/µs
2
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