IRF7811AV Datasheet, PDF (2/6 Pages) International Rectifier – N-Channel Application-Specific MOSFETs

IRF7811AV
Electrical Characteristics
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Total Gate Charge, Control FET
Total Gate Charge, Synch FET
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Switch Charge (Q_gs2 + Q_gd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min
V_(BR)DSS
R_DS(on)
V_GS(th)
30
–––
1.0
–––
I_DSS –––
–––
I_GSS –––
Q_g –––
Q_g –––
Q_gs1 –––
Q_gs2 –––
Q_gd –––
Q_SW –––
Q_OSS –––
R_G 0.5
t_d(on) –––
t_r
–––
t_d(off) –––
t_f
–––
C_iss –––
C_oss –––
C_rss –––
Typ Max Units
Conditions
––– ––– V V_GS = 0V, I_D = 250µA
d 11 14 mΩ V_GS = 4.5V, I_D = 15A
––– 3.0 V V_DS = V_GS, I_D = 250µA
––– 50 µA V_DS = 30V, V_GS = 0V
––– 20 µA V_DS = 24V, V_GS = 0V
––– 100 mA V_DS = 24V, V_GS = 0V, T_J = 100°C
––– ±100 nA V_GS = ± 20V
17 26 nC V_DS = 24V, I_D = 15A, V_GS = 5.0V
14 21
V_GS = 5.0V, V_DS < 100mV
3.4 –––
1.6 –––
5.1 –––
V_DS = 16V, I_D = 15A
6.7 –––
8.1 12
––– 4.4
V_DS = 16V, V_GS = 0
Ω
8.6 –––
21 –––
43 –––
10 –––
ns V_DD = 16V
I_D = 15A
V_GS = 5.0V
Clamped Inductive Load
1801 –––
723 –––
46 –––
pF V_GS = 0V
V_DS = 10V
Diode Characteristics
Parameter
Diode Forward Voltage
f Reverse Recovery Charge
Reverse Recovery Charge
f (with Parallel Schottsky)
Symbol Min
V_{SD –––}
Q_rr –––
Q_rr –––
Typ Max Units
Conditions
d _{––– 1.3 V} T_J = 25°C, I_S = 15A ,V_GS = 0V
50 ––– nC ^{di/dt = 700A/µs}
V_DD = 16V, V_GS = 0V, I_D = 15A
43 ––– nC ^{di/dt = 700A/µs , (with 10BQ040)}
V_DD = 16V, V_GS = 0V, I_D = 15A
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 400 µs; duty cycle ≤ 2%.
ƒ When mounted on 1 inch square copper board, t < 10 sec.
„ Typ = measured - Q_oss
… Typical values of R_DS(on) measured at V_GS = 4.5V, Q_G, Q_SW and Q_OSS measured at V_GS =5.0V, I_F = 15A.
† R_θ is measured at T_J approximately 90°C
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