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IRF7811ATR Datasheet, PDF (2/4 Pages) International Rectifier – PROVISIONAL DATASHEET
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IRF7809A/IRF7811A
Electrical Characteristics
Parameter
IRF7809A
IRF7811A
Min Typ Max Min Typ Max Units
Conditions
Drain-to-Source
Breakdown Voltage*
BVDSS 30
–
–
28 –
–
V VGS = 0V, ID = 250µA
Static Drain-Source
on Resistance*
RDS(on)
7 8.5
10 12 mΩ VGS = 4.5V, ID = 15A‚
Gate Threshold Voltage*
Drain-Source Leakage
Current*
Current*
VGS(th)
1.0
IDSS
1.0
30
150
V VDS = VGS,ID = 250µA
30 µA VDS = 24V, VGS = 0
150
VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
IGSS
Current*
±100
±100 nA VGS = ±12V
Total Gate Chg Cont FET*
Total Gate Chg Sync FET*
Pre-Vth
Gate-Source Charge
QG
QG
QGS1
61 75
55 73
14
19 23
17 20.5
2.7
VGS=5V, ID=15A, VDS=16V
VGS = 5V, VDS< 100mV
VDS = 16V, ID = 15A
Post-Vth
QGS2
3.5
Gate-Source Charge
1.3
nC
Gate to Drain Charge
QGD
Switch Chg(Qgs2 + Qgd)*
Qsw
Output Charge*
Qoss
Gate Resistance
RG
Turn-on Delay Time
td (on)
Rise Time
t
r
Turn-off Delay Time
td (off)
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance Crss
13.5
17 22.5
25 30
1.1
19
9
32
12
– 7300 –
– 900 –
– 350 –
4.5
5.8 7.0
26 31
1.8
VDS = 16V, VGS = 0
Ω
8
VDD = 16V, ID = 15A
4
ns V = 5V
GS
16
Clamped Inductive Load
8
– 1800 –
– 900 –
– 60 –
pF VDS = 16V, VGS = 0
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Min Typ Max Units
Conditions
Diode Forward
VSD
Voltage*
1.0
1.0 V IS = 15A‚, VGS = 0V
Reverse Recovery
Qrr
94
Charge„
Reverse Recovery
Qrr(s)
87
Charge (with Parallel
Schottky)„
82
nC di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
74
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 300 µs; duty cycle ≤ 2%.
ƒ When mounted on 1 inch square copper board, t < 10 sec.
„
Typ = measured - Q
oss
* Devices are 100% tested to these parameters.
2
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