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IRF7809AVPBF Datasheet, PDF (2/8 Pages) International Rectifier – N-Channel Application-Specific MOSFETs
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IRF7809AVPbF
Electrical Characteristics
Parameter
Min Typ Max Units Conditions
Drain-to-Source
Breakdown Voltage
BVDSS 30
–
–
V
VGS = 0V, ID = 250µA
Static Drain-Source
on Resistance
RDS(on)
7.0 9.0 mΩ VGS = 4.5V, ID = 15A‚
Gate Threshold Voltage
Drain-Source Leakage
CCuurrrreennt t*
VGS(th)
1.0
IDSS
V
30
150 µA
VDS = VGS,ID = 250µA
VDS = 24V, VGS = 0
VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
IGSS
Current*
±100 nA
VGS = ±12V
Total Gate Chg Cont FET
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
QG
QG
QGS1
41 62
36 54
7.0
VGS=5V, ID=15A, VDS=20V
VGS = 5V, VDS< 100mV
VDS = 20V, ID = 15A
Post-Vth
QGS2
2.3
nC
Gate-Source Charge
Gate to Drain Charge
QGD
Switch Chg(Qgs2 + Qgd)
Qsw
Output Charge*
Qoss
Gate Resistance
RG
Turn-on Delay Time
td (on)
Rise Time
tr
Turn-off Delay Time
td (off)
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
12
14 21
30 45
1.5 3.0 Ω
14
36
ns
96
10
– 3780 –
– 1060 – pF
Crss – 130
–
Source-Drain Rating & Characteristics
ID=15A, VDS=16V
VDS = 16V, VGS = 0
VDD = 16V, ID = 15A
VGS = 5V
Clamped Inductive Load
VDS = 16V, VGS = 0
Parameter
Min Typ Max Units Conditions
Diode Forward
VSD
Voltage*
1.3 V
IS = 15A‚, VGS = 0V
Reverse Recovery
Qrr
Charge„
120
nC di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
Reverse Recovery
Qrr(s)
Charge (with Parallel
Schottky)„
150
nC di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Notes: 
‚
ƒ
„
…
2
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Typical values measured at V = 4.5V, I = 15A.
GS
F
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