|
IRF7807ZTRPBF Datasheet, PDF (2/10 Pages) International Rectifier – Control FET for Notebook Processor Power | |||
|
◁ |
IRF7807ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
âââ
âââ
âââ
1.35
âââ
âââ
âââ
âââ
âââ
22
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
0.023
11
14.5
1.8
- 4.7
âââ
âââ
âââ
âââ
âââ
7.2
2.1
0.7
2.7
1.7
3.4
2.8
2.5
6.9
6.2
10
3.1
770
190
100
âââ V VGS = 0V, ID = 250µA
âââ V/°C Reference to 25°C, ID = 1mA
e 13.8 m⦠VGS = 10V, ID = 11A
18.2
e VGS = 4.5V, ID = 8.8A
2.25 V VDS = VGS, ID = 250µA
âââ mV/°C
1.0
150
100
-100
âââ
11
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 8.8A
âââ
VDS = 15V
âââ nC VGS = 4.5V
âââ
ID = 8.8A
âââ
See Fig. 16
âââ
âââ nC VDS = 15V, VGS = 0V
4.8 â¦
âââ
e VDD = 15V, VGS = 4.5V
âââ
ID = 8.8A
âââ ns Clamped Inductive Load
âââ
âââ
VGS = 0V
âââ pF VDS = 15V
âââ
Æ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
IAR
d Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
63
8.8
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
âââ âââ 3.1
MOSFET symbol
âââ âââ 88
A showing the
integral reverse
âââ âââ 1.0
p-n junction diode.
e V TJ = 25°C, IS = 8.8A, VGS = 0V
âââ 31 46 ns TJ = 25°C, IF = 8.8A, VDD = 15V
e âââ 17 26 nC di/dt = 100A/µs
www.irf.com
|
▷ |