IRF7807ZPBF_15 Datasheet, PDF(2/10 Page) International Rectifier – Control FET for Notebook Processor Power

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IRF7807ZPBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Control FET for Notebook Processor Power

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IRF7807ZPbF

Static @ TJ = 25Â°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

âÎVDSS/âTJ

RDS(on)

VGS(th)

âVGS(th)

IDSS

IGSS

gfs

Qgs1

Qgs2

Qgd

Qgodr

Qsw

Qoss

td(on)

td(off)

Ciss

Coss

Crss

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Output Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

âââ

1.35

âââ

0.023

14.5

1.8

- 4.7

âââ

7.2

2.1

0.7

2.7

1.7

3.4

2.8

2.5

6.9

6.2

3.1

770

190

100

âââ V VGS = 0V, ID = 250ÂµA

âââ V/Â°C Reference to 25Â°C, ID = 1mA

e 13.8 mâ¦ VGS = 10V, ID = 11A

18.2

e VGS = 4.5V, ID = 8.8A

2.25 V VDS = VGS, ID = 250ÂµA

âââ mV/Â°C

1.0

150

100

-100

âââ

ÂµA VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125Â°C

nA VGS = 20V

VGS = -20V

S VDS = 15V, ID = 8.8A

âââ

VDS = 15V

âââ nC VGS = 4.5V

âââ

ID = 8.8A

âââ

See Fig. 16

âââ

âââ nC VDS = 15V, VGS = 0V

4.8 â¦

âââ

e VDD = 15V, VGS = 4.5V

âââ

ID = 8.8A

âââ ns Clamped Inductive Load

âââ

VGS = 0V

âââ pF VDS = 15V

âââ

Æ = 1.0MHz

Avalanche Characteristics

Parameter

EAS

IAR

d Single Pulse Avalanche Energy

Â Avalanche Current

Typ.

âââ

Max.

8.8

Units

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

ÃÂ (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

âââ âââ 3.1

MOSFET symbol

âââ âââ 88

A showing the

integral reverse

âââ âââ 1.0

p-n junction diode.

e V TJ = 25Â°C, IS = 8.8A, VGS = 0V

âââ 31 46 ns TJ = 25Â°C, IF = 8.8A, VDD = 15V

e âââ 17 26 nC di/dt = 100A/Âµs

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