IRF7807VD1PBF-1_15 Datasheet, PDF (2/9 Pages) International Rectifier – Industry-standard pinout SO-8 Package

IRF7807VD1PbF-1
Electrical Characteristics
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Total Gate Charge*
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate-to-Drain Charge
Switch Charge (Q_gs2 + Q_gd)
Output Charge*
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Symbol Min
BV_DSS
R_DS(on)
V_GS(th)
30
–––
1.0
–––
I_DSS
–––
–––
I_GSS
–––
Q_G
–––
Q_GS1
–––
Q_GS2
–––
Q_GD
–––
Q_SW
–––
Q_OSS
–––
R_G
0.9
t_d(on)
–––
t_r
–––
t_d(off)
–––
t_f
–––
Typ Max Units
Conditions
––– ––– V V_GS = 0V, I_D = 250μA
d 17 25 mΩ V_GS = 4.5V, I_D = 7.0A
––– 3.0 V V_DS = V_GS, I_D = 250μA
––– 100 μA V_DS = 30V, V_GS = 0V
––– 20 μA V_DS = 24V, V_GS = 0V
––– 2.0 mA V_DS = 24V, V_GS = 0V, T_J = 100°C
––– ±100 nA V_GS = ± 20V
9.5 14
2.3 –––
V_DS = 4.5V
1.0
2.4
–––
–––
nC
I_D = 7.0A
V_DS = 16V
3.4 5.2
12 16.8
V_DS = 16V, V_GS = 0
––– 2.8 Ω
6.3 –––
V_DD = 16V, I_D = 7.0V
1.2 ––– _ns V_GS = 5V, R_G = 2Ω
11 –––
Resistive Load
2.2 –––
Diode Characteristics
Parameter
Diode Forward Voltage
f Reverse Recovery Time
f Reverse Recovery Charge
Symbol Min
V_SD
–––
–––
t_rr
–––
Q_rr
–––
Typ Max Units
Conditions
––– 0.5
––– 0.39
dà _V T_J = 25°C, I_S = 1.0A ,V_GS = 0V
d T = 125°C, I_S = 1.0A, V_GS = OV
di/dt = 700A/μs
51 ––– ns
V_DD = 16V, V_GS = 0V, I_D = 15A
51 ––– nC ^{TJ = 25°C, IS = 7.0A ,VDS = 16V}
di/dt = 100A/μs
Notes: _
‚
ƒ
„
…
†
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
50% Duty Cycle, Rectangular
Typical values of R_DS(on) measured at V_GS = 4.5V, Q_G, Q_SW and Q_OSS measured at V_GS = 5.0V, I_F = 7.0A.
R_θ is measured at T_J approximately 90°C
Device are 100% tested to these parameters.
2
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May 19, 2014