IRF7805QPBF_08 Datasheet, PDF (2/5 Pages) International Rectifier – Advanced Process TechnologyUltra Low On-Resistance

IRF7805QPbF
Static @ T_J = 25°C (unless otherwise specified)
BV_DSS
R_DS(on)
V_GS(th)
I_DSS
h ^Parameter
Drain-to-Source Breakdown Voltage
h Static Drain-to-Source On-Resistance
h Gate Threshold Voltage
Drain-to-Source Leakage Current
Min.
30
–––
1.0
–––
–––
Typ.
–––
9.2
–––
–––
–––
Max. Units
Conditions
–––
11
d ^{V VGS = 0V, ID = 250µA}
mΩ ^VGS ^{= 4.5V, I}D ^{= 7.0A}
3.0 V V_DS = V_GS, I_D = 250µA
70
V_DS = 30V, V_GS = 0V
10 µA V_DS = 24V, V_GS = 0V
I_GSS
Q_g
Q_gs1
Q_gs2
Q_gd
Q_sw
Q_oss
Gate-to-Source Forward Leakage
h ^{Gate-to-Source Reverse Leakage}
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
h Switch Charge (Q_gs2 + Q_gd)
h Output Charge
––– ––– 150
V_DS = 24V, V_GS = 0V, T_J = 100°C
––– ––– 100 _nA V_GS = 12V
––– ––– -100
V_GS = -12V
––– 22 31
V_GS = 5.0V
––– 3.7 –––
V_DS = 16V
––– 1.4 ––– nC I_D = 7.0A
––– 6.8 –––
––– 8.2 11.5
––– 3.0 3.6 nC V_DS = 16V, V_GS = 0V
R_G
Gate Resistance
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
0.5 ––– 1.7
––– 16 –––
––– 20 –––
––– 38 –––
––– 16 –––
Ω
e V_DD = 16V, V_GS = 4.5V
ns ^{ID = 7.0A}
R_G= 2Ω
Resistive Load
Diode Characteristics
Parameter
I_S
Continuous Source Current
Ù (Body Diode)
I_SM
Pulsed Source Current
V_SD
Q_rr
h ^{(Body Diode)}
Diode Forward Voltage
f Reverse Recovery Charge
Q_rr(s)
f ^{Reverse Recovery Charge}
(with Parallel Schottky)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
88
55
Max. Units
Conditions
2.5
MOSFET symbol
A ^{showing the}
integral reverse
106
p-n junction diode.
1.2 V T_J = 25°C, I_S = 7.0A, V_GS = 0V
di/dt = 700A/µs
––– ns
V_DS = 16V, V_GS = 0V, I_S = 7.0A
di/dt = 700A/µs (with 10BQ040)
––– nC
V_DS = 16V, V_GS = 0V, I_S = 7.0A
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 300 µs; duty cycle ≤ 2%.
ƒ When mounted on 1 inch square copper board, t < 10 sec.
„ Typ = measured - Q_oss
… R_θ is measured at T_J of approximately 90°C.
† Devices are 100% tested to these parameters.
2
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