IRF7805 Datasheet, PDF (2/8 Pages) International Rectifier – Chip-Set for DC-DC Converters

IRF7805/IRF7805A
Electrical Characteristics
Parameter
IRF7805
Min Typ Max
Drain-to-Source
Breakdown Voltage*
V_(BR)DSS 30
–
–
Static Drain-Source
on Resistance*
R_DS(on)
9.2 11
Gate Threshold Voltage* V (th) 1.0
GS
Drain-Source Leakage I_DSS
30
Current*
150
IRF7805A
Min Typ Max Units
Conditions
30 – – V V_GS = 0V, I_D = 250µA
9.2 11 mΩ V_GS = 4.5V, I_D = 7A‚
1.0
V V = V ,I = 250µA
DS
GS D
30 µA V_DS = 24V, V_GS = 0
150
V_DS = 24V, V_GS = 0,
Tj = 100°C
Gate-Source Leakage I
GSS
Current*
Total Gate Charge*
Q
g
Pre-Vth
Q_gs1
Gate-Source Charge
±100
22^„ 31^„
3.7
±100 nA V = ±12V
GS
22^„ 31^„
3.7
V = 5V, I = 7A
GS
D
V_DS = 16V, I_D = 7A
Post-Vth
Q
1.4
gs2
Gate-Source Charge
1.4
nC
Gate to Drain Charge
Switch Charge*
(Q_gs2 + Q_gd)
Output Charge*
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
gd
Q_SW
Q
oss
R_g
t_d(on)
t
r
t_d (off)
t_f
6.8
8.2 11.5
30 36
1.7
16
20
38
16
6.8
8.2
30 36
V = 16V, V = 0
DS
GS
1.7
Ω
16
V_DD = 16V
20
ns I = 7A
D
38
R_g = 2Ω
16
V_GS = 4.5V
Resistive Load
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Min Typ Max Units
Conditions
Diode Forward
V_SD
Voltage*
1.2
1.2 V I_S = 7A‚, V_GS = 0V
Reverse Recovery
Q_rr
88
Charge…
88
nC di/dt = 700A/µs
V = 16V, V = 0V, I = 7A
DS
GS
S
Reverse Recovery
Q_rr(s)
55
Charge (with Parallel
55
di/dt = 700A/µs
(with 10BQ040)
Schotkky)…
V_DS = 16V, V_GS = 0V, I_S = 7A
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 300 µs; duty cycle ≤ 2%.
ƒ When mounted on 1 inch square copper board, t < 10 sec.
„ Measured at V_DS < 100mV. This approximates actual operation of a synchronous rectifier.
… Typ = measured - Q_oss
2
* Devices are 100% tested to these parameters.
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