IRF7779L2PBF_15 Datasheet, PDF (2/11 Pages) International Rectifier – Optimized for Synchronous Rectification

IRF7779L2PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
ΔΒV_DSS/ΔT_J
R_DS(on)
V_GS(th)
ΔV_GS(th)/ΔT_J
I_DSS
Drain-to-Source Breakdown Voltage
150
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
3.0
Gate Threshold Voltage Coefficient
–––
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
83
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
R_G
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
Total Gate Charge
–––
Pre-Vth Gate-to-Source Charge
–––
Post-Vth Gate-to-Source Charge
–––
Gate-to-Drain Charge
–––
Gate Charge Overdrive
–––
Switch Charge (Q_gs2 + Q_gd)
–––
Output Charge
–––
Gate Resistance
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Output Capacitance
–––
Output Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Pulsed Source Current
Ãg (Body Diode)
–––
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
0.13
9.0
4.0
-15
–––
–––
–––
–––
–––
97
27
6.9
33
30
40
39
1.5
16
19
36
12
6660
840
180
5620
400
Typ.
–––
–––
–––
110
510
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
i ^{––– V/°C Reference to 25°C, ID = 2mA}
11 mΩ VGS = 10V, ID = 40A
5.0
V ^VDS ^{= V}GS^{, I}D ^{= 250μA}
––– mV/°C
20
250
100
-100
–––
μA ^VDS ^{= 150V, V}GS ^{= 0V}
V_DS = 120V, V_GS = 0V, T_J = 125°C
nA ^VGS ^{= 20V}
V_GS = -20V
S ^VDS ^{= 50V, I}D ^{= 40A}
150
–––
V_DS = 75V
––– nC VGS = 10V
50
I_D = 40A
–––
See Fig. 9
–––
––– nC VDS = 16V, VGS = 0V
–––
–––
Ãi Ω
V_DD = 75V, V_GS = 10V
–––
I_D = 40A
––– ns R_G=1.8Ω
–––
–––
V_GS = 0V
––– pF VDS = 25V
–––
ƒ = 1.0MHz
–––
V_GS = 0V, V_DS = 1.0V, f=1.0MHz
–––
V_GS = 0V, V_DS = 120V, f=1.0MHz
Max. Units
Conditions
67
MOSFET symbol
A showing the
270
integral reverse
p-n junction diode.
1.3
i _V T_J = 25°C, I_S = 40A, V_GS = 0V
170
770
i ^{ns TJ = 25°C, IF = 40A, VDD = 75V}
nC di/dt = 100A/μs
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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May 6, 2014