IRF7759L2TR1PBF Datasheet, PDF (2/11 Pages) International Rectifier – RoHS Compliant, Halogen Free

IRF7759L2TR/TR1PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)/∆T_J
I_DSS
I_GSS
gfs
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
R_G
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q_gs2 + Q_gd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
75 ––– ––– V ^VGS ^{= 0V, I}D ^{= 250µA}
i ^{––– 0.02 ––– V/°C Reference to 25°C, ID = 2mA}
––– 1.8 2.3 mΩ ^VGS ^{= 10V, I}D ^{= 96A}
2.0
–––
3.0
-11
4.0
–––
V
mV/°C
V_DS
=
V_GS,
I_D
=
250µA
––– ––– 20
––– ––– 250
µA ^{VDS = 75V, VGS = 0V}
V_DS = 60V, V_GS = 0V, T_J = 125°C
––– ––– 100 _nA VGS = 20V
––– ––– -100
V_GS = -20V
74 ––– ––– S VDS = 25V, ID = 96A
––– 200 300
––– 37 –––
V_DS = 38V
––– 11 ––– _nC ^VGS ^{= 10V}
––– 62 93
I_D = 96A
––– 91 –––
See Fig. 9
––– 73 –––
––– 60 ––– nC ^VDS ^{= 16V, V}GS ^{= 0V}
––– 1.1 –––
––– 18 –––
––– 37 –––
––– 80 –––
Ãi Ω
V_DD = 38V, V_GS = 10V
ns ^{ID = 96A}
R_G=1.8Ω
––– 33 –––
––– 12222 –––
––– 1465 –––
V_GS = 0V
V_DS = 25V
––– 609 ––– pF ƒ = 1.0MHz
––– 7457 –––
––– 955 –––
V_GS = 0V, V_DS = 1.0V, f=1.0MHz
V_GS = 0V, V_DS = 60V, f=1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãg (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
––– ––– 160
––– ––– 640
––– ––– 1.3
––– 64 96
––– 150 225
MOSFET symbol
showing the
A
integral reverse
i ^{p-n junction diode.}
V TJ = 25°C, IS = 96A, VGS = 0V
i ^{ns TJ = 25°C, IF = 96A, VDD = 38V}
nC di/dt = 100A/µs
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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