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IRF7759L2PBF Datasheet, PDF (2/11 Pages) International Rectifier – RoHS Compliant, Halogen Free | |||
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IRF7759L2TR/TR1PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)/âTJ
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
75 âââ âââ V VGS = 0V, ID = 250µA
i âââ 0.02 âââ V/°C Reference to 25°C, ID = 2mA
âââ 1.8 2.3 m⦠VGS = 10V, ID = 96A
2.0
âââ
3.0
-11
4.0
âââ
V
mV/°C
VDS
=
VGS,
ID
=
250µA
âââ âââ 20
âââ âââ 250
µA VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
74 âââ âââ S VDS = 25V, ID = 96A
âââ 200 300
âââ 37 âââ
VDS = 38V
âââ 11 âââ nC VGS = 10V
âââ 62 93
ID = 96A
âââ 91 âââ
See Fig. 9
âââ 73 âââ
âââ 60 âââ nC VDS = 16V, VGS = 0V
âââ 1.1 âââ
âââ 18 âââ
âââ 37 âââ
âââ 80 âââ
Ãi â¦
VDD = 38V, VGS = 10V
ns ID = 96A
RG=1.8â¦
âââ 33 âââ
âââ 12222 âââ
âââ 1465 âââ
VGS = 0V
VDS = 25V
âââ 609 âââ pF Æ = 1.0MHz
âââ 7457 âââ
âââ 955 âââ
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 60V, f=1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãg (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ âââ 160
âââ âââ 640
âââ âââ 1.3
âââ 64 96
âââ 150 225
MOSFET symbol
showing the
A
integral reverse
i p-n junction diode.
V TJ = 25°C, IS = 96A, VGS = 0V
i ns TJ = 25°C, IF = 96A, VDD = 38V
nC di/dt = 100A/µs
Notes:
Â
Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ⤠400µs; duty cycle ⤠2%.
2
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