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IRF7757 Datasheet, PDF (2/9 Pages) International Rectifier – Power MOSFET(Vdss=20V) | |||
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IRF7757
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
20 âââ âââ
âââ 0.013 âââ
âââ âââ 35
âââ âââ 40
V
V/°C
mâ¦
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 4.8A Â
VGS = 2.5V, ID = 3.8A Â
0.60 âââ 1.2 V VDS = VGS, ID = 250µA
11 âââ âââ S VDS = 10V, ID = 4.8A
âââ âââ 1.0
âââ âââ 25
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
âââ âââ 100 nA VGS = 12V
âââ âââ -100
VGS = -12V
âââ 15 23
ID = 4.8A
âââ 2.5 âââ nC VDS = 16V
âââ 4.8 âââ
âââ 9.5 âââ
VGS = 4.5V
VDD = 10V Â
âââ 9.2 âââ ns ID = 1.0A
âââ 36 âââ
RG = 6.2â¦
âââ 14 âââ
VGS = 4.5V
âââ 1340 âââ
âââ 180 âââ
VGS = 0V
pF VDS = 15V
âââ 132 âââ
Æ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
âââ âââ 1.2
âââ âââ 19
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
D
G
S
âââ âââ 1.2 V TJ = 25°C, IS = 1.2A, VGS = 0V Â
âââ 20 30 ns TJ = 25°C, IF = 1.2A
âââ 10 15 nC di/dt = 100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠400µs; duty cycle ⤠2%.
 Surface mounted on 1 in square Cu board
2
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