|
IRF7755 Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=-20V) | |||
|
◁ |
IRF7755
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
-20 âââ âââ
âââ 0.011 âââ
âââ 35.3 51
âââ 44.3 86
V
V/°C
mâ¦
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -3.7A Â
VGS = -2.5V, ID = -2.8A Â
VGS(th)
Gate Threshold Voltage
-0.45 âââ -1.2 V VDS = VGS, ID = -250µA
gfs
Forward Transconductance
7.0 âââ âââ S VDS = -10V, ID = -3.7A
IDSS
Drain-to-Source Leakage Current
âââ âââ -15
âââ âââ -25
µA
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ -100 nA VGS = -12V
âââ âââ 100
VGS = 12V
Qg
Total Gate Charge
âââ 11 17
ID = -3.7A
Qgs
Gate-to-Source Charge
âââ 2.1 âââ nC VDS = -16V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
âââ 3.5 âââ
âââ 9 14
VGS = -4.5V
VDD = -10V, VGS = -4.5V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
âââ 13 20 ns ID = -1.0A
âââ 89 133
RG = 6.0â¦
âââ 61 92
RD = 10⦠Â
Ciss
Input Capacitance
âââ 1090 âââ
VGS = 0V
Coss
Output Capacitance
âââ 182 âââ pF VDS = -15V
Crss
Reverse Transfer Capacitance
âââ 124 âââ
Æ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ -1.0
showing the
A integral reverse
G
âââ âââ -15
p-n junction diode.
S
âââ âââ -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V Â
âââ 55 82 ns TJ = 25°C, IF = -1.0A
âââ 29 43 nC di/dt = -100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠300µs; duty cycle ⤠2%.
 When mounted on 1 inch square copper board, t < 10sec.
2
www.irf.com
|
▷ |